Formation method of semiconductor structure

Abstract

The invention discloses a semiconductor structure forming method, and the method comprises the steps: providing a plurality of substrates, wherein each substrate is provided with a first surface and a second surface opposite to the first surface, and the first surface of each substrate is provided with a device layer; providing physical vapor deposition equipment which comprises a pre-treatment cavity and a technological cavity, wherein the pre-treatment cavity and the technological cavity are connected with each other; placing the plurality of substrates into the technological cavity, and forming a conductive layer on the second surface of each substrate or on the surface of each device layer through employing the technology of physical vapor deposition; enabling the plurality of substrates to be placed in the pre-treatment cavity after the conductive layer is formed, and carrying out the annealing of the conductive layer. The formed conductive layer is uniform in electric thickness, and is stable in electrical performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] In the field of semiconductor manufacturing, in order to realize the electrical connection between semiconductor devices, various metal interconnection structures and formation processes have been developed. For example, a physical vapor deposition (Physical Vapor Deposition, PVD) Al) or aluminum copper (AlCu) alloy as the material of the electrical interconnection structure. However, with the development of Ultra Large Scale Integration (ULSI), the process of forming metal interconnection structures is also challenged. [0003] Taking the existing Through Silicon Via (TSV for short) structure as an example, Figure 1 to Figure 3 It is a schematic cross-sectional structure diagram of the formation process of the TSV structure in the prior art. [0004] Please refer to figure 1 , ...

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Problems solved by technology

[0008] However, since the electrical properties of the formed conductive film are unstable, there are differences in the electrical properties of the conductive plugs formed from the conductive film.

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