Lateral double-diffusion field effect transistor and forming method therefor
A technology of lateral double-diffusion and field-effect transistors, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems that the performance of lateral double-diffusion field-effect transistors needs to be improved, and achieves increased breakdown resistance, improved breakdown voltage, The effect of reducing dynamic loss
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[0035] As mentioned in the background art, the performance of the existing lateral double-diffused field effect transistor still needs to be further improved. For example, the parameters to be improved include source-drain breakdown voltage, on-state resistance, gate-drain parasitic capacitance, and the like.
[0036] To this end, the present invention provides a lateral double-diffused field effect transistor and a method for forming the same. After forming the drift region, an inversion doped region is formed in the drift region, and the depth of the inversion doped region is less than that of the drift region. depth, the inversion doped region is doped with impurity ions of the first conductivity type, the drift region is doped with impurity ions of the second conductivity type, and the first conductivity type is opposite to the second conductivity type, so that the lateral double diffusion field effect The breakdown resistance of the tube increases, which increases the brea...
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