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A method for growing large-area mos2 thin films

A thin-film growth and large-area technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of scarcity of MoS2 single crystal preparation technology, and achieve easy repeatability, low cost, and facilitate industrialization The effect of production

Active Publication Date: 2018-06-29
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Judging from the results reported so far, the size of MoS2 single crystal epitaxy is mostly below 100 microns, and the preparation technology of MoS2 single crystal with larger area is still very scarce.

Method used

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  • A method for growing large-area mos2 thin films
  • A method for growing large-area mos2 thin films
  • A method for growing large-area mos2 thin films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiments of the present invention provide a method for synthesizing large-area MoS 2 The preparation method of thin film, concrete steps are carried out as follows;

[0022] Put sulfur powder and molybdenum trioxide into figure 1 Placed in the corresponding position as shown, wherein molybdenum trioxide is 0.1 mole, sulfur powder B is 0.2 mole; SiO 2 The substrate a, the heat-conducting gold foil layer b, and the ceramic sheet c are stacked in sequence and placed on the top of the molybdenum source. The temperature of the body was raised to 700°C and kept for 20 minutes. After the reaction was complete, the sample was taken out for characterization. The prepared MoS 2 A film with a film size of 150 microns and a film thickness of 3 nm.

[0023] figure 2 Represents the MoS prepared in Example 1 2 Optical microscope photographs of the films, from figure 2 It can be seen that the prepared film has a uniform morphology;

[0024] After Raman characterization of t...

Embodiment 2

[0027] Put sulfur powder and molybdenum trioxide into figure 1 Placed in the corresponding position as shown, where molybdenum source A is 0.1 mole, sulfur source B is 0.2 mole; SiO 2 The substrate a, the heat-conducting gold foil layer b, and the ceramic sheet c are stacked in sequence and placed above the molybdenum source. The temperature of the body was raised to 800°C, and the temperature was kept for 30 minutes. After the reaction was complete, the sample was taken out for characterization. The prepared MoS 2 The film size is 300 microns, the film thickness is 5 nanometers, and the prepared film has uniform morphology.

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Abstract

The invention discloses a large-area MoS2 film growing method. According to the method, a large-area MoS2 film is prepared by adopting a chemical vapor deposition method. The method specifically comprises the following steps: 1) molybdenum trioxide and sulfur powder are separately arranged on the center and the end positions of a furnace; a SiO2 substrate a, a heat-conduction layer b and a ceramic chip c are sequentially stacked up above a Mo source horizontally; a connection pipeline is sealed; 2) protective gas is charged into a sealed quartz pipe and then is exhausted after 5-10 minutes; a heating switch of the furnace is switched on, and the temperature is raised to 700-800 DEG C; the temperature is maintained for 10 minutes, and then heating is stopped; and the furnace is cooled to the room temperature, and the MoS2 film with the size ranging from 50 to 300 micrometers is obtained. According to the large-area MoS2 film growing method provided by the invention, the reaction time for preparing the film can be greatly shortened; and the prepared film is uniform in appearance; the prepared MoS2 film can be applied to fields of photoelectric detectors, logic circuits, electronic components and the like.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a large-area MoS 2 Thin film growth method. Background technique [0002] Molybdenum disulfide is a layered compound mainly composed of van der Waals force, and its chemical bond is mainly S-Mo-S; molybdenum disulfide film is similar to graphene in structure and performance, and has excellent electronic, mechanical and optical properties. . It has been widely used in aerospace, aviation, chemical industry, metallurgy and other industries, and can also be used in catalytic additives, coatings and sealing materials and other fields. But unlike graphene, molybdenum disulfide films have a tunable band gap. The band gap of bulk crystal molybdenum disulfide is 1.2eV, and its electronic transition mode is indirect transition; when the thickness is a single layer, the band gap of molybdenum disulfide can reach 1.8eV, and its electronic transition mode changes to direc...

Claims

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Application Information

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IPC IPC(8): C23C16/30
CPCC23C16/30
Inventor 冯双龙聂长斌魏兴战陆文强史浩飞杜春雷
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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