Microwave dielectric ceramic Cu3ZnTiGe3O12 with high quality factor and ultralow dielectric constant and preparation method of microwave dielectric ceramic Cu3ZnTiGe3O12

A technology of microwave dielectric ceramics and ultra-low dielectric constant, which is applied in the field of dielectric ceramic materials, and can solve the limitations of low-temperature co-firing technology and the development of microwave multilayer devices, excessive temperature coefficient of resonance frequency, and few single-phase microwave dielectric ceramics. and other problems, to achieve the effect of small temperature coefficient τ?, good temperature stability, and low raw material cost

Inactive Publication Date: 2016-04-27
GUILIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

[0009] In the process of exploring and developing new low-firing microwave dielectric ceramic materials, material systems such as Li-based compounds, Bi-based compounds, tungstate compounds and tellurate-based compounds with inherently low sintering temperatures have received extensive attention and research. However, due to the three performance indicators of microwave dielectric ceramics (ε r with Q f and τ ? ) is a mutually restrictive relationship (see literature: The restrictive relationship between the dielectric properties of microwave dielectric ceramic materials, Zhu Jianhua, Liang Fei, Wang Xiaohong, Lu Wenzhong, Electronic Components and Materials, Issue 3, March 2005), satisfying three There are very few single-phase microwave dielectric ceramics that require high performance and can be sintered at low temperature, mainly because their resonant frequency temperature coefficient is usually too large or the quality factor is too low to meet the practical application requirements.
At present, most of the research on microwave dielectric ceramics is a summary of experience obtained through a large number of experiments, but there is no complete theory to explain the relationship between microstructure and dielectric properties. Predict the microwave dielectric properties such as its resonant frequency temperature coefficient and quality factor, which largely limits the development of low temperature co-firing technology and microwave multilayer devices
Exploring and developing microwave dielectric ceramics that can be sintered at low temperature and have near-zero resonant frequency temperature coefficient (-10ppm / ℃≤τ?≤+10ppm / ℃) and high quality factor is the technology in this field A difficult problem that people have always wanted to solve but have never been able to succeed in

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  • Microwave dielectric ceramic Cu3ZnTiGe3O12 with high quality factor and ultralow dielectric constant and preparation method of microwave dielectric ceramic Cu3ZnTiGe3O12

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[0018] Table 1 shows three specific examples of different sintering temperatures constituting the present invention and their microwave dielectric properties. The preparation method is as described above, and the microwave dielectric properties are evaluated by the cylindrical dielectric resonator method.

[0019] This ceramic can be widely used in the manufacture of microwave devices such as various dielectric substrates, resonators and filters, and can meet the technical needs of mobile communications and satellite communications systems.

[0020] Table 1:

[0021]

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Abstract

The invention discloses temperature-stable microwave dielectric ceramic Cu3ZnTiGe3O12 with high quality factor and ultralow dielectric constant and a preparation method of the microwave dielectric ceramic Cu3ZnTiGe3O12. The preparation method comprises steps as follows: (1), original powder of CuO, ZnO, TiO2 and GeO2 with the purity higher than 99.9% in percentage by weight is weighed and blended according to composition of Cu3ZnTiGe3O12; (2), raw materials in the step (1) are subjected to wet ball milling and mixing for 12 h, a ball milling medium adopts distilled water, and the raw materials are dried and then pre-sintered in the atmosphere at the temperature of 800 DEG C for 6 h; (3), a binder is added to powder prepared in the step (2), the mixture is subjected to granulation and compression molding and is sintered in the atmosphere at the temperature of 850-900 DEG C for 4 h finally; the binder adopts a polyvinyl alcohol solution with the mass concentration of 5%, and polyvinyl alcohol accounts for 3% of the total mass of the powder. The prepared ceramic is well sintered at the temperature lower than 900 DEG C, the dielectric constant reaches 16.2-17.1, the quality factor Qf of the ceramic is up to 89,000-144,000 GHz, the temperature coefficient of resonance frequency is small, and the ceramic has great application value in industry.

Description

Technical field [0001] The invention relates to a dielectric ceramic material, in particular to a dielectric ceramic material used for manufacturing microwave components such as ceramic substrates, resonators and filters used in microwave frequencies, and a preparation method thereof. Background technique [0002] Microwave dielectric ceramics refer to ceramics that are used as dielectric materials and perform one or more functions in circuits in the microwave frequency band (mainly UHF and SHF frequency bands). They are widely used as resonators, filters, and dielectric substrates in modern communications. Chips and dielectric guided wave circuits are the key basic materials of modern communication technology. They have been used in portable mobile phones, car phones, cordless phones, TV satellite receivers, and military radars. They are used in modern communication tools. The process of miniaturization and integration is playing an increasingly important role. [0003] The diele...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/45C04B35/64
CPCC04B35/45C04B35/64C04B2235/3232C04B2235/3284C04B2235/3287C04B2235/656C04B2235/658C04B2235/96
Inventor 徐军古李纯纯邓酩
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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