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A method of making nigesn material

A layer material and intercalation layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficulty in forming NiGeSn thin films, affecting the application of NiGeSn thin films, and poor quality of NiGeSn thin films, so as to achieve easy industrial implementation , to ensure flatness, to improve the effect of electrical performance

Active Publication Date: 2018-11-27
SHANGHAI UNIV OF ENG SCI
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  • Description
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  • Application Information

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Problems solved by technology

However, in the process of using this method to prepare NiGeSn, when Ni reacts with GeSn, because the reaction speed of Ni and Ge is too fast, and the thermal stability of Sn atoms is poor, it is not easy to form a continuous NiGeSn film; in addition, due to the diffusion of Sn , so that the quality of the formed NiGeSn film is not good, which greatly affects the application of NiGeSn film as source and drain contact materials

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  • A method of making nigesn material
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  • A method of making nigesn material

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[0027] Such as figure 1 Shown: Ge will be prepared by MBE method 1-x sn x Layer material after dilute hydrofluoric acid (HF: H 2 O=1:50, volume ratio) and the surface of deionized water are cleaned as the initial substrate, wherein, 0.01≤x≤0.12; 1-x sn x The surface of the layer is grown by physical vapor deposition (for example: magnetron sputtering method) with a thickness of 3nm Al metal insertion layer; then on the Al metal insertion layer, a Ni metal with a thickness of 10nm is grown by magnetron sputtering process or electron beam evaporation process. layer; then perform rapid annealing treatment: raise the temperature to 500°C at a heating rate of 40°C / s, keep it warm for 30 seconds, then cool to room temperature within 120 seconds, and the annealing atmosphere is nitrogen, so that Ni metal passes through the metal insertion layer and Ge 1-x sn x layer reacts to form NiGe 1-x sn x layer, where: 0.01≤x≤0.12; finally use 10wt% hydrochloric acid solution to remove t...

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Abstract

The invention discloses a method for manufacturing an NiGeSn material. The method comprises the steps of providing a Ge1-xSnx layer as an initial substrate firstly; growing a metal insertion layer on the surface of the Ge1-xSnx layer, and then growing an Ni metal layer on the surface of the metal insertion layer; performing rapid annealing treatment: heating to 300-600 DEG C at the heating rate of 25-75 DEG C / second, performing thermal insulation for 20-120 seconds, and then cooling to room temperature within 100-200 seconds; and finally removing the metal insertion layer and unreacted metal Ni by adopting a chemical etching method to obtain the NiGeSn material. The method is simple in process, easy to realize industrial implementation and the like; the generated NiGeSn material is continuous, uniform and tidy; and meanwhile, the NiGeSn material, used as the contact material for a transistor device, can satisfy the application requirements, and can improve the electrical performance of the transistor device.

Description

technical field [0001] The invention relates to a method for making a NiGeSn material, which belongs to the technical field of material preparation. Background technique [0002] In recent years, germanium-tin alloys (GeSn), which belong to the same group four elements as traditional silicon materials, have attracted great attention from researchers because of their unique properties. In the transistor channel region, GeSn has become a hotspot in the research of high-mobility MOSFET devices due to its high carrier mobility, such as: improving hole mobility by introducing high-voltage strain in the GeSn channel, germanium-tin quantum well devices In addition, in the source and drain regions of the transistor, GeSn can be introduced as a stress source for the uniaxial compressive strain of the Ge channel transistor because of its lattice constant greater than that of germanium (Ge), to further improve the performance of the Ge channel transistor. carrier mobility. [0003] N...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/225
CPCH01L21/02381H01L21/02535H01L21/02631H01L21/225
Inventor 平云霞孟骁然
Owner SHANGHAI UNIV OF ENG SCI