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Method for preparing copper-indium-diselenide photoelectric film by two-step method of nitrate system

A photoelectric thin film, copper indium selenide technology, applied in photovoltaic power generation, circuits, electrical components, etc., to achieve the effects of easy operation, low equipment requirements, and low production costs

Inactive Publication Date: 2016-05-04
SHANDONG JIANZHU UNIV
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Problems solved by technology

[0026] In order to solve the existing problems in the preparation of copper indium selenium photoelectric thin film, the present invention invented a two-step method for preparing copper indium selenium photoelectric thin film with nitrate system

Method used

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Embodiment 1

[0036] a. Cleaning of tin dioxide conductive glass substrate: cleaning the glass substrate as described above, the size of the substrate is 20mm×20mm.

[0037] b. Put 1.0 copies of C 6 H 5 Na 3 O 7 ·2H 2 O, 6.5 parts Cu(NO 3 ) 2 ·3H 2 O, 10.0 parts In(NO 3 ) 3 ·4.5H 2 O, 6.0 parts SeO 2 Put into 2700.0 parts of distilled water to dissolve the substance in the solution.

[0038] c. Pour the above-mentioned electrodeposition solution into a three-electrode device, using a saturated calomel electrode as a reference electrode, a platinum electrode as an auxiliary electrode, and tin dioxide conductive glass as a research electrode, using a transistor potentiostat at a deposition potential of -0.5 The film was deposited at room temperature under V, the deposition time was 30 minutes, and the precursor film sample was obtained by natural drying.

[0039] d. Place the precursor film sample on the holder, add selenium powder to the hydrazine hydrate, the precursor film sample does not contact...

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Abstract

The invention provides a method for preparing a copper-indium-diselenide photoelectric film by a two-step method of a nitrate system, and belongs to the technical field of preparation of photoelectric films for solar cells. The copper-indium-diselenide photoelectric film is obtained through the following steps: firstly, cleaning a tin dioxide conductive glass substrate; secondly, putting C<6>H<5>Na<3>O<7>.2H<2>O, Cu(NO<3>)<2>.3H<2>O, In(NO<3>)<3>.4.5H<2>O and SeO<2>into distilled water, obtaining a precursor film on the conductive glass substrate by an electrodeposition method, carrying out natural drying, and putting the product into a tube furnace with hydrazine hydrate, preventing a precursor film sample from being in contact with the hydrazine hydrate, adding selenium powder to the hydrazine hydrate, heating the hydrazine hydrate in the closed tube furnace and selenizing the precursor film; and finally taking out the sample for drying to obtain the copper-indium-diselenide photoelectric film. The method does not need a high vacuum condition, and is low in demands on instrument and equipment, low in production cost, high in production efficiency and easy to operate; the obtained copper-indium-diselenide photoelectric film has relatively good continuity and uniformity; a main phase is a CuInSe<2> phase; and low-cost and large-scale industrial production can be achieved.

Description

Technical field [0001] The invention belongs to the technical field of preparation of photovoltaic films for solar cells, and particularly relates to a method for preparing a copper indium selenium photovoltaic film by a two-step method of a nitrate system. Background technique [0002] With the development of society and economy, energy shortage and pollution caused by energy consumption have become prominent problems in the development of domestic society. Coal and oil are non-renewable resources. Therefore, the development and utilization of clean and renewable energy is important for protecting the environment and ensuring economic viability. Both sustainable development and building a harmonious society are of great significance. Photovoltaic power generation has the advantages of safety, reliability, no noise, no pollution, less restriction, low failure rate, and easy maintenance. It can use solar energy as a clean, safe and environmentally friendly renewable energy. Theref...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/0322Y02E10/541Y02P70/50
Inventor 刘科高李静许超徐勇刘慧石磊
Owner SHANDONG JIANZHU UNIV
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