AlGaN template, preparation method of AlGaN template and semiconductor device on AlGaN template

Abstract

The invention discloses an AlGaN template, a preparation method of the AlGaN template and a semiconductor device on the AlGaN template, and belongs to the field of semiconductor technology. The AlGaN template comprises a substrate and an Al<1-x>Ga<x>N crystallization thin film deposited on the substrate, wherein 0<x<1. The semiconductor device comprises a template and a nitride semiconductor layer. The template is the aforesaid AlGaN template. The nitride semiconductor layer is deposited on the Al<1-x>Ga<x>N crystallization thin film. The method comprises steps of providing the substrate; and depositing the Al<1-x>Ga<x>N crystallization thin film on the substrate, wherein 0<x<1.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlGaN template, a preparation method of the AlGaN template and a semiconductor device on the AlGaN template. Background technique [0002] Currently, most GaN-based blue light emitting diodes (English: light emitting diode, abbreviation: LED) and GaN-based white light LEDs use sapphire substrates. Since sapphire and GaN materials have always had lattice mismatch and thermal mismatch problems, and there is only a small lattice mismatch between AlN materials, GaN materials, and sapphire substrates, AlN is placed on the sapphire substrate as a buffer layer and GaN. Specifically, an AlN buffer layer is first grown on a sapphire substrate to make an AlN template, and then GaN epitaxy is grown on the AlN template to make an LED epitaxial wafer. [0003] In the process of realizing the present invention, the inventor finds that there are at least the following problems in th...

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Problems solved by technology

[0005] In order to solve the problem that when GaN epitaxy is grown on the existing AlN template, the subsequent GaN epitaxy will accumulate relatively large stress, and the epitaxial wafer is in a warped state when growing the quantum well structure in GaN epitaxy, so that the growth temperature of the quantum well structure is not stable. Uniformity, poor wavelength uniformity of epitaxial wafers, resulting in the inability to mass-produce high-yield epitaxial wafers. Embodiments of the present invention provide an AlGaN template, a method for preparing an AlGaN template, and a semiconductor device on an AlGaN template.

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