Axisymmetric semiconductor laser bar beam combining technology and module

Abstract

The invention discloses a semiconductor laser bar packaging technology and a beam combining module adopting an axisymmetric structure. A plurality of semiconductor laser bars are fixedly and uniformly distributed around an optical fiber coupler in an axisymmetric manner; the beam combining module adopts a cylindrical symmetrical structure in which semiconductor laser bars are clamped by an inner gear and an outer gear, the number of teeth is Q, the semiconductor laser bars are sleeved and concentric, the semiconductor laser bars are uniformly distributed and clamped between the meshed teeth of the inner gear and the outer gear, and a light-emitting surface and the inner surfaces of the inner gear and the outer gear are positioned on the same cylindrical surface; the optical fiber coupler is made of an optical fiber with a diffraction structure etched on the outer surface of a bare optical fiber cladding perpendicular to the optical axis of the optical fiber, and laser is diffracted into the optical fiber on the surface of the bare optical fiber. The fan-shaped clamping structure enables one end of the light-emitting surface of the bar to be clamped more tightly, heat conduction is facilitated, thermal expansion and cold contraction deformation of the clamping tool is converted into angular displacement of the inner gear and the outer gear around the circle center shaft, irradiation of laser to the optical fiber is not changed, and pressure stress is relieved.

Description

technical field [0001] The present invention relates to high-power laser technology, mainly relates to a semiconductor laser bar packaging technology and module, especially relates to a diffraction beam combination technology based on axisymmetric internal and external gear teeth and clamping semiconductor laser bars and The module, combined laser fiber output high laser power beam quality ratio, which is conducive to collimation into a small beam divergence angle, can combine a large number of semiconductor laser bar output lasers, high power density repetition frequency pulse laser for beam shaping and Beam pointing and stable beam combining technology. Background technique [0002] The semiconductor laser bar is an engineered commercial laser device. The further combination and integration of the output beams of the semiconductor laser bar usually adopts a planar stacking and series structure; in this building block beam combining structure, the semiconductor laser bar an...

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Problems solved by technology

[0002] The semiconductor laser bar is an engineered commercial laser device. The further combination and integration of the output beams of the semiconductor laser bar usually adopts a planar stacking and series structure; in this building block beam combining structure, the semiconductor laser bar and the clamping metal structure are integrated Dimensional intervals are arranged for fusion welding and solid connection. The thermal expansion and contraction coefficients of the semiconductor laser bar and the clamping metal device are different, and nearly half of the electric power of the semiconductor laser bar is output in the form of heat energy during operation, resulting in The local temperature gradient at the semiconductor laser bar is large, and the thermal management level of module cooling is limited by space factors and heat conduction speed

[0003] This solid connection design concept has structural stress caused by heat accumulation, which further intensifies the internal stress of the semiconductor device, resulting in a semiconductor laser bar whose life is much shorter than that of a single packaged semiconductor laser device, and a large number of integrated laser bars. The output laser power beam quality ratio and wavelength stability are limited, which cannot meet the small beam divergence and wavelength stability requirements of long-distance laser energy transmission, and cannot obtain high laser power density

[0004] In this series circuit mode, after a single light-emitting point device in the semiconductor laser bar fails, the total current will be shunted to other light-emitting points on the semiconductor laser bar, resulting in an increase in the carrying current of the single light-emitting point device. There is a certain risk in the reliability of the entire module system

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