High-voltage plasma power supply

A plasma and power supply technology, applied in the application field of ion technology, can solve problems such as difficulty in meeting the needs of medium and high-power industrial waste gas treatment, unfavorable cost performance, unsuitable marketization, and unsuitability for large-scale use, achieving complete protection measures, easy promotion and application, low cost effect

Active Publication Date: 2016-06-29
南京威登等离子科技设备有限公司
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some high-power plasma discharge power supplies that have been commercially produced in China use microsecond or nanosecond narrow pulse power supplies. The cost of the drive circuit is high, and the cost performance is not conducive to marketization. There are also half-bridge hard switching structures driven by single-phase IGBTs. , the power efficiency of the power supply is low, the failure rate is high, it is not suitable for large-scale use, and it is difficult to meet the needs of medium and high-power industrial waste gas treatment

Method used

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Examples

Experimental program
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Embodiment

[0035] see Figure 1-Figure 5, a high-voltage plasma power supply, the plasma power supply includes a three-phase half-controlled rectifier circuit, a delay start circuit, a filter energy storage circuit, a full bridge circuit, an LC series resonant circuit, a voltage doubler rectifier circuit, a power regulation circuit, and a feedback control circuit circuit, frequency conversion circuit, IGBT full-bridge drive circuit, and alarm circuit, the three-phase half-controlled rectifier circuit is connected to a high-voltage transformer through a full-bridge circuit and an LC series resonant circuit, and the power regulation circuit and feedback control circuit are connected to a feedback control circuit. The feedback control circuit is connected with the full bridge drive circuit through the frequency conversion circuit. The three-phase half-controlled rectifier circuit is completed by half-controlled rectifier bridge BR1, controlled by resistors R1~6, capacitors C11, C18~20, diod...

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PUM

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Abstract

The invention relates to a high-voltage plasma power supply comprising a three-phase half-control rectification circuit, a time-delay starting circuit, a filtering energy storage circuit, a full-bridge circuit, an LC series resonance circuit, a low-voltage rectification circuit, a power regulation circuit, a feedback control circuit, a frequency conversion circuit, an IGBT full-bridge driving circuit, and an alarm circuit, the three-phase half-control rectification circuit is connected with a high-voltage transformer via the full-bridge circuit and the LC series resonance circuit, the power regulation circuit and the feedback control circuit are connected with the feedback control circuit, and the feedback control circuit is connected with the full-bridge driving circuit via the frequency conversion circuit.

Description

Technical field [0001] The invention involves a plasma power supply, which specifically involves a high -voltage plasma power supply, which is the field of plasma technology. Background technique [0002] The low -temperature plasma power supply involved in the present invention is suitable for DBD medium blocking discharge, cable -type electromotive discharge, and wire -type load discharge from flue gas particles.The medium that is suitable for industrial exhaust gas treatment is usually a flat -panel DBD channel, a coaxial round tube DBD channel and a circular tube arranged DBD channel.Materials or hollow pipes, conductive electrode is filled with aluminum powder or magnesium powder; cable -type electric halo discharge suitable for industrial exhaust gas treatment is made of concentric metal materials. The high -voltage electrode can be a molybdenum wire with a small curvature radius, andGolden or alloy wires can also be a metal rod with spikes, and the ground is a metal hollow...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/57H02M9/06
CPCH03K3/57Y02B70/10
Inventor 戴斌王贤斌陶忠元
Owner 南京威登等离子科技设备有限公司
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