Preparation method and application of sulfur-doped graphene and derivatives thereof

A technology for sulfur-doped graphene and derivatives, applied in the field of graphene, can solve the problems of harsh chemical vapor deposition conditions, difficult to realize industrialization, complicated preparation methods, etc., and achieves convenient industrial production, simple and easy-to-operate preparation methods, and low cost. Effect

Active Publication Date: 2016-07-06
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the chemical vapor deposition conditions are harsh, the equipment is expensive, the preparation method is complicated, the production efficiency is low, it cannot be mass-produced, and it is difficult to realize industrialization

Method used

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  • Preparation method and application of sulfur-doped graphene and derivatives thereof
  • Preparation method and application of sulfur-doped graphene and derivatives thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045]A preparation method of sulfur-doped graphene material, comprising the steps of:

[0046] (1) In the potassium sulfate solution 100mL containing 10g / L, add the graphene solution 1mL that concentration is 10g / L, and mix uniformly, obtain mixed suspension; The mass ratio of graphene and potassium sulfate in the suspension is 0.01:1 ;

[0047] (2) freeze-drying the suspension that step (1) obtains, obtains the solid mixture of graphene and potassium sulfate;

[0048] (3) in N 2 Under the protection of gas, the solid mixture of the obtained graphene and potassium sulfate was calcined at a high temperature of 300 ° C for 30 h to obtain a sulfur-doped graphene intermediate product;

[0049] (4) Cool the sulfur-doped graphene intermediate product to 20° C., wash with ultrapure water, and then dry to obtain the sulfur-doped graphene final product.

[0050] The sulfur-doped graphene that embodiment 1 obtains is carried out transmission electron microscope scanning on Hitachi J...

Embodiment 2

[0054] A preparation method of sulfur-doped graphene material, comprising the steps of:

[0055] (1) in the potassium sulfate solution 10mL that contains 0.1g / L, add the graphene solution 5mL that concentration is 10g / L, and mix uniformly, obtain mixed suspension, the mass ratio of graphene and potassium sulfate in the suspension is 5: 1;

[0056] (2) freeze-drying the suspension that step (1) obtains, obtains the solid mixture of graphene and potassium sulfate;

[0057] (3) in N 2 Under the protection of gas, the obtained graphene and potassium sulfate solid were calcined at a high temperature of 1200 ° C for 2 hours to obtain a sulfur-doped graphene intermediate product;

[0058] (4) Cool the obtained sulfur-doped graphene intermediate product to 30° C., wash with ultrapure water, and then dry to obtain the sulfur-doped graphene final product.

[0059] The sulfur-doped graphene that embodiment 2 obtains is carried out transmission electron microscope scanning, and scannin...

Embodiment 3

[0061] A preparation method of sulfur-doped graphene material, comprising the steps of:

[0062] (1) in the magnesium sulfate solution 100mL that contains 0.1g / L, add the graphene solution 1mL that concentration is 10g / L, and mix uniformly, obtain mixed suspension, the mass ratio of graphene and magnesium sulfate in the suspension is 1: 1;

[0063] (2) the suspension obtained in step (1) is freeze-dried to obtain a solid mixture of graphene oxide and magnesium sulfate;

[0064] (3) in N 2 Under the protection of gas, the solid mixture of the obtained graphene and magnesium sulfate was calcined at a high temperature of 800 ° C for 2 hours to obtain a sulfur-doped graphene intermediate product;

[0065] (4) After the obtained product is cooled to 30°C, it is washed with ultrapure water and dried.

[0066] The sulfur-doped graphene obtained in Example 3 is scanned by a transmission electron microscope, and the scanning conditions are the same as in Example 1; the test results ...

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Abstract

The invention relates to a preparation method of sulfur-doped graphene and derivatives thereof. The method includes the following steps: 1) uniformly mixing a solution of the graphene and the derivatives thereof with an sulfur-containing ionic group solution to prepare a suspension liquid; 2) freeze-drying the suspension liquid to obtain a solid mixture of the graphene and the derivatives thereof with the sulfur-containing ionic salt; 3) under protective atmosphere, calcining the solid mixture of the graphene and the derivatives thereof with the sulfur-containing ionic salt to obtain an intermediate of the sulfur-doped graphene and derivatives thereof; and 4) cooling, washing and drying the intermediate to obtain a finish product of the sulfur-doped graphene and derivatives thereof. The preparation method is simple in operation, employs common devices, is low in cost and achieves industrial production. The sulfur-doped graphene and derivatives thereof has very high specific surface area, has penetrated porous structure and has high pore capacity and high electric conductivity.

Description

technical field [0001] The invention belongs to the field of graphene, and relates to a sulfur-doped graphene, a sulfur-doped graphene derivative, a preparation method and an application thereof, in particular to a preparation method of doping graphene and its derivatives with inorganic sulfur-containing substances Sulfur-doped graphene method. Background technique [0002] Graphene is a sp 2 The periodic honeycomb two-dimensional carbonaceous new material formed by hybridized carbon atoms arranged in a hexagon has ultra-high hardness and its theoretical specific surface area is as high as 2630m 2 / g, and are currently being widely used as raw materials for sensors, batteries, supercapacitors, etc. [0003] Doping can change the electronic structure of graphene, effectively changing the band gap of graphene. The incorporation of heteroatoms into the graphene lattice can not only effectively introduce a band gap, but also increase the defects and local reactivity of graphe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 刘晨明李泽晖李明杰曹宏斌张懿
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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