Lead magnesium niobate and lead titanate monocrystalline-based semiconductor ferroelectric field effect heterostructure, manufacture method therefor and application thereof

Abstract

The invention relates to a lead magnesium niobate and lead titanate monocrystalline-based semiconductor ferroelectric field effect heterostructure, a manufacture method therefor and application thereof. The semiconductor ferroelectric field effect heterostructure comprises a substrate made up by a lead magnesium niobate and lead titanate monocrystalline and a channel made up by a titanium dioxide semiconductor thin film formed on the substrate. The general chemical formula of the titanium dioxide semiconductor thin film is TiO2-delta, wherein 0<=delta<=0.2 and preferably 0<=delta<=0.1. According to the semiconductor ferroelectric field effect heterostructure, the pure phase titanium dioxide thin film TiO2-delta having oxygen vacancy is used as the channel. Compared with an oxide semiconductor thin film doped with transition metal ions, the pure phase titanium dioxide thin film is advantaged in that preparation processes and conditions are effectively simplified, unfavorable factors such as film component non-uniformity and the like, and cost of further application of the ferroelectric field effect heterostructure can be lowered.

Description

technical field [0001] The invention relates to a semiconductor ferroelectric field effect heterostructure comprising a lead magnesium niobate titanate lead (abbreviated as PMN-PT) ferroelectric single crystal substrate as a gate and an n-type semiconductor titanium dioxide film as a channel, and its preparation method and application. Background technique [0002] Titanium dioxide semiconductor has excellent physical, chemical, optical and mechanical properties, has been a research hotspot in the world, and has been widely used in gas sensors, solar cells, electronic devices and magnetoelectric composite structures. Generally, titanium dioxide has three crystal structures: rutile, anatase and brookite, among which the anatase structure is widely used. As a typical wide-bandgap semiconductor, bulk titanium dioxide has high resistance and is in an insulating state, which limits its electrical applications. In 2006, NguyenHoaHong et al published an article entitled "Room-Tem...

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Problems solved by technology

However, oxide semiconductor films doped with transition metal ions are prone to compositional segregation, resulting in enrichment of transition metal atoms (for example, cobalt-doped ZnO:Co films will produce metal cobalt atom clusters in the film) or form transition metal oxides. (such as Co 2 o 3 ) and other impurity phases, leading to deterioration of film properties

In addition, transition metal ion-doped oxide dilute magnetic semiconductors have disadvantages such as complex target preparation procedures, uneven distribution of metal ions in the target, difficulty in controlling the valence state of metal ions, and harsh film deposition conditions.

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