Check patentability & draft patents in minutes with Patsnap Eureka AI!

Micro-electromechanical System (MEMS) microphone and manufacturing method thereof

A manufacturing method and microphone technology, applied in the direction of sensors, electrostatic transducers, microphones, electrical components, etc., can solve the problems of susceptibility to pressure disturbance, low tensile stress of the diaphragm, and static resistance, etc., to achieve easy mass production, The production process is simple and the process cost is low

Inactive Publication Date: 2016-07-20
AAC ACOUSTIC TECH (SHENZHEN) CO LTD
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the low tensile stress of the diaphragm, it is easily disturbed by pressure, resulting in deformation buckling or static resistance, so that the sensitivity and reliability of MEMS microphones are reduced.
If a high-strength elastic film is used as the diaphragm, the sensitivity of the microphone will be sacrificed, resulting in reduced performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro-electromechanical System (MEMS) microphone and manufacturing method thereof
  • Micro-electromechanical System (MEMS) microphone and manufacturing method thereof
  • Micro-electromechanical System (MEMS) microphone and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0037] see figure 1 , is a schematic cross-sectional structure diagram of a preferred embodiment of the MEMS microphone manufactured by the MEMS microphone manufacturing method provided by the present invention. The MEMS microphone 100 includes a substrate 1 and a capacitive system disposed on the substrate 1 and insulated and connected to the substrate 1 . The base 1 is made of semiconductor material, such as silicon, which has a back cavity 10, an upper surface and a lower surface opposite to the upper surface, an insulating layer 11 is provided on the upper surface of the base 1, and the back cavity 10 Through the insulating layer 11 , the upper surface and the lower surface, the back cavity 10 can be formed by bulk silicon micromachining or etching. The capacitor system is insulated and connected to the substrate 1 through the insulating layer 11 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides an MEMS microphone. The MEMS microphone comprises a substrate possessing a back cavity and a capacitance system arranged on the substrate and comprising a backboard and a diaphragm opposite to the backboard, the backboard and the diaphragm are arranged at an interval and form a sound cavity, and a stress layer is arranged at one side of the diaphragm far away from the sound cavity. The present invention also provides a manufacturing method of the MEMS microphone. The method is especially suitable for a low-tension stress diaphragm, and can prevent the diaphragm from crinkling, deforming or buckling after the overall structure stress balance, thereby guaranteeing the situation that the MEMS microphone possesses the high sensitivity and high reliability. Moreover, the MEMS microphone produced by the method is simple in manufacturing process flow and low in process cost, and is easy for the mass production.

Description

【Technical field】 [0001] The present invention relates to an acoustic-electric conversion device, in particular to a micro-electro-mechanical system (Micro-Electro-MechanicSystem, MEMS) microphone and a manufacturing method thereof. 【Background technique】 [0002] With the development of wireless communication, users have higher and higher requirements for the call quality of mobile phones. As the voice pickup device of mobile phones, the design of microphone directly affects the call quality of mobile phones. [0003] At present, the microphone widely used in mobile phones is MEMS microphone. A MEMS microphone related to the present invention includes a substrate and a capacitive system composed of a diaphragm and a back plate. The diaphragm and the back plate are arranged opposite and spaced apart. The diaphragm vibrates under the action of sound waves, causing the distance between the diaphragm and the back plate to change, which in turn changes the capacitance of the cap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04R19/04H04R31/00
CPCH04R19/04H04R31/00H04R2201/003
Inventor 王琳琳周晔刘政谚刘雨微孟珍奎
Owner AAC ACOUSTIC TECH (SHENZHEN) CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com