Micro-electronic multilayer metal film etching liquid and application thereof

Abstract

The invention relates to micro-electronic multilayer metal film etching liquid and application thereof. The micro-electronic multilayer metal film etching liquid comprises, by weight percentage, 5%-25% of hydrogen peroxide, 3%-10% of auxiliary acid, 2%-10% of a hydrogen peroxide stabilizer, 0.001%-1% of a taper angle control agent, 0.1%-1% of an additive and the balance ultrapure water. The auxiliary acid is an acidic material capable of providing H+; the hydrogen peroxide stabilizer is a combination of three kinds of bis-phosphonic acid tetrasodium, 8-hydroxyquinoline, citric acid, dipicolinic acid, aminoethanol phosphoric acid, picolinic acid and polyacrylamide; and the taper angle control agent is an organic compound containing amidogens, and the carbon chain length of the taper angle control agent ranges from 1 to 10. According to the micro-electronic multilayer metal film etching liquid, the special hydrogen peroxide stabilizer is selected, the additive in the etching liquid is used in a matched manner, and therefore the long-period stored etching liquid can be obtained; and meanwhile, the etching capacity of the etching liquid is stabilized.

Description

Technical field [0001] The invention relates to a multilayer metal film etching solution for microelectronics, which is suitable for wet etching of copper or copper alloy layers of display electrodes such as TFT-LCD and OLED. The etching solution is stable during storage and has a longer period of use. Etching life. Background technique [0002] In semiconductor electronics manufacturing, it is necessary to form conductive paths on substrates or insulating layers such as silicon dioxide / silicon nitride. Al, Cu, Ag, etc. are widely used in circuits for semiconductor devices due to their good conductivity. A metal or alloy film is formed on the substrate by sputtering or vapor deposition. The photoresist is uniformly coated on the metal film, and then the required pattern is formed by exposure, development and other methods, and then the metal is obtained by dry / wet etching pattern. [0003] At present, as the glass substrates in the TFT-LCD industry are getting larger and larger, ...

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Problems solved by technology

[0007] Compared with the etchant of inorganic oxidants (multivalent ions such as iron and copper), there are problems such as difficulty in controlling the dissolution rate of Cu, large side etching (Sideetch), which makes the edge shape of the pattern unclear and becomes uneven, etc.

There is a problem that the line width of the metal wiring becomes smaller due to the large side etching, which increases the resistance.

In addition, if the edge shape of the pattern is not good, it will cause the problem of open circuit or short circuit, and the step coverage in the film formation of the subsequent process will

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