Large-current silicon on insulator lateral insulated gate bipolar transistor device

Abstract

The invention discloses a novel large-current silicon on insulator lateral insulated gate bipolar transistor. According to the semiconductor, a buried oxide is arranged on a P-type substrate, an N-type drift region is arranged on the buried oxide, a P-type body region and an N-type buffer region are arranged on the N-type drift region, the N-type buffer region is internally provided with a P-type collector region, a collector metal is connected onto the P-type collector region, a field oxygen layer is arranged above the N-type drift region, the P-type body region is internally provided with a P-type emitter region, an N-type emitter region is arranged around, an emitter metal is connected onto the N-type emitter region and the P-type emitter region, a gate oxide is arranged between the field oxygen layer and the N-type emitter region, a first polysilicon layer is arranged on the surface of the gate oxide, a first gate metal is connected onto the surface of the first polysilicon layer, a longitudinal groove is arranged outside the P-type body region, the longitudinal groove is internally provided with silicon dioxide and a second polysilicon layer coated by other medium, and a second gate metal is connected onto the second polysilicon layer.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, and is a novel high-current silicon-on-insulator lateral insulated gate bipolar transistor, which is especially suitable for monolithic integrated power chips and used to realize accurate control of motor systems. Background technique [0002] Insulated Gate Bipolar Transistor IGBT is a composite power device evolved from the combination of MOS gate device structure and bipolar transistor structure. It has the characteristics of both MOS transistor and bipolar transistor, and has good on-state current and switching loss. compromise relationship between. Silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LateralInsulatedGateBipolarTransistor, SOI-LIGBT) is a typical device based on SOI technology, which has the advantages of easy integration, high withstand voltage, strong drive current capability, and fast switching speed. widely used in power integrat...

AI Technical Summary

Problems solved by technology

The SOI-LIGBT structure is usually used in the circuit to adjust the energy sent to various loads through the DC power supply. Occasionally, the load in the circuit will form a short circuit, causing the DC power supply to be directly connected to the collector and emitter of the SOI-LIGBT, while At this time, the gate bias is still turned on. At this time, the device will withstand high voltage and high current at the same time, and the drain with high current density will produce obvious thermal effects. Once the short-circuit working time of the device is exceeded, the device will undergo thermal breakdown. and fail

At the same time, the on-state BV value of the device will be significantly reduced due to thermal breakdown in this region, and the drop in withstand voltage will reduce the maximum operating voltage of the device, which limits the application of the device

[0004] In addition, due to the improvement of current capability, the device will be more prone to latch-up effect, which will cause the gate signal to lose control of the device, the device structure may experience destructive failure, and the ability to suppress latch-up will decrease, making the reliability of the device reduce

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