Large-current silicon on insulator lateral insulated gate bipolar transistor device

A bipolar transistor, silicon-on-insulator technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as destructive failure of device structure, thermal breakdown of devices, and reduced latch-up suppression capability, and reduce electron aggregation. level, the effect of improving the on-current density, and improving the latch-up suppression capability
CN105826367AInactive Publication Date: 2016-08-03SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SOUTHEAST UNIV
Publication Date
2016-08-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a novel large-current silicon on insulator lateral insulated gate bipolar transistor. According to the semiconductor, a buried oxide is arranged on a P-type substrate, an N-type drift region is arranged on the buried oxide, a P-type body region and an N-type buffer region are arranged on the N-type drift region, the N-type buffer region is internally provided with a P-type collector region, a collector metal is connected onto the P-type collector region, a field oxygen layer is arranged above the N-type drift region, the P-type body region is internally provided with a P-type emitter region, an N-type emitter region is arranged around, an emitter metal is connected onto the N-type emitter region and the P-type emitter region, a gate oxide is arranged between the field oxygen layer and the N-type emitter region, a first polysilicon layer is arranged on the surface of the gate oxide, a first gate metal is connected onto the surface of the first polysilicon layer, a longitudinal groove is arranged outside the P-type body region, the longitudinal groove is internally provided with silicon dioxide and a second polysilicon layer coated by other medium, and a second gate metal is connected onto the second polysilicon layer.
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Description

technical field

[0001] The invention mainly relates to the technical field of power semiconductor devices, and is a novel high-current silicon-on-insulator lateral insulated gate bipolar transistor, which is especially suitable for monolithic integrated power chips and used to realize accurate control of motor systems. Background technique

[0002] Insulated Gate Bipolar Transistor IGBT is a composite power device evolved from the combination of MOS gate device structure and bipolar transistor structure. It has the characteristics of both MOS transistor and bipolar transistor, and has good on-state current and switching loss. compromise relationship between. Silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LateralInsulatedGateBipolarTransistor, SOI-LIGBT) is a typical device based on SOI technology, which has the advantages of easy integration, high withstand voltage, strong drive current capability, and fast switching speed. widely used in power integrat...

Claims

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