Three-dimensional pn junction processing technology of solar cells
A technology of solar cells and processing technology, applied in the direction of sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve limited problems, only 1-2 microns, etc.
Active Publication Date: 2017-08-25
JIANGSU OUDAFENG NEW ENERGY TECH DEV CO LTD
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Problems solved by technology
[0002] Exploring new materials and new structures that can maximize the photoelectric conversion efficiency of solar cells and reduce costs is of great significance to the application and development of solar cells. The usual silicon solar cell is a planar structure, that is, the PN junction is a plane, and the front side is distributed with gates. The wire electrode is equipped with a backplane electrode on the reverse side. In a cell of a specified size, such as a 156 cell, the PN junction area is constant. Although there is a related technology to set three-dimensional microstructure protrusions on its surface, due to technical limitations, The height of its raised structure is limited, only 1-2 microns, and there are large deficiencies in the absorption and conversion of sunlight
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[0012] figure 1 An embodiment of a three-dimensional PN junction processing technology of a solar cell of the present invention is shown, and a trapezoidal groove of 50 microns to 100 microns is produced on the surface of a blank silicon wafer by a dry etching method, including the following steps:
[0013] (1) Use photolithography to make an etching mask on the surface of the solar cell, using AZ positive photoresist with a thickness of 2 to 20 microns, ultraviolet light band i, g or H line;
[0014] (2) Using Bosch etching process, etching and sidewall deposition protection are operated alternately to achieve an etching depth of several 50 microns to 100 microns, inductively coupled ICP power 1kW to 3kW, RF power 5~200W, sample etching temperature range 5~30 degrees Celsius, sulfur hexafluoride gas SF 6 Flow 1~100sccm, octafluorocyclobutane gas C 4 f 8 Flow range 1~300sccm, etching and deposition unit step time 1~20 seconds;
[0015] (3) After dry etching, the polymer pr...
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The invention discloses a three-dimensional PN junction processing technology for a solar battery cell. The surface of a blank silicon wafer is manufactured to be provided with rectangular grooves, trapezoidal grooves or other specially-shaped grooves scaled from dozens of micron to hundreds of microns through the dry etching process. According to the technical scheme of the invention, for a battery cell of a given size, such as a 156 type battery cell, the area of a PN junction on the battery cell is constant. In the depth direction of the silicon wafer, a deep groove of a certain depth and a certain width and scaled from dozens of micron to hundreds of microns is formed. In this way, the PN junction is converted from being planar into being serpentine. In the geometric dimensioning view, the area of the PN junction might be increased by tens of percentages or even doubled. That means, the silicon material is fully utilized to be applied to a photoelectric conversion interface.
Description
technical field [0001] The invention relates to the technical field of solar cell processing, in particular to a three-dimensional PN junction processing technology for solar cells. Background technique [0002] Exploring new materials and new structures that can maximize the photoelectric conversion efficiency of solar cells and reduce costs is of great significance to the application and development of solar cells. The usual silicon solar cell is a planar structure, that is, the PN junction is a plane, and the front side is distributed with gates. The wire electrode is equipped with a backplane electrode on the reverse side. In a cell of a specified size, such as a 156 cell, the PN junction area is constant. Although there is a related technology to set three-dimensional microstructure protrusions on its surface, due to technical limitations, The height of its raised structure is limited, only 1-2 microns, and there are large deficiencies in the absorption and conversion o...
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IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 朱学林季益群
Owner JIANGSU OUDAFENG NEW ENERGY TECH DEV CO LTD