Programmable spinning logic device and electronic device employing same

Abstract

The invention relates to a programmable spinning logic device and an electronic device employing same. The programmable spinning logic device comprises an SHE bias layer formed by antiferromagnetic material with spin Hall effect, a magnetic tunnel junction including a free magnetic layer arranged on and contacted with the SHE bias layer, a barrier layer arranged on the free magnetic layer, and a referential magnetic layer arranged on the barrier layer, and electric wirings connect to one side of the referential magnetic layer of the magnetic tunnel junction to arrange the magnetic tunnel junction between the SHE bias layer and the electric wirings, wherein the SHE bias layer applies a bias magnetic field on the free magnetic layer along the first direction, and the SHE bias layer receives current in first, second and third surfaces. The direction of the current in the first and second surfaces is parallel to the first direction, and the current in the third surface controls the operation mode of the spinning logic device. The SHE bias layer and the electric wirings apply reading current flowing by the magnetic tunnel junction.

Description

Technical field [0001] The present invention generally relates to spintronics, and more particularly, to a pure current-driven programmable spin logic device that can operate under a zero magnetic field, and also relates to electronic equipment including the spin logic device. Background technique [0002] Digital logic devices designed using the electronic spin characteristics of magnetic materials are called spin logic devices or magnetic logic devices. Compared with ordinary semiconductor logic devices, this reconfigurable logic device based on spin-related transport characteristics has high operating frequency, unlimited reconfiguration times, non-volatility of logic information, radiation protection, and magnetic random storage. Taking advantage of memory (MRAM) compatibility and other advantages, it is considered a strong candidate for the next generation of logic devices to replace traditional semiconductor logic devices. [0003] figure 1 A spin logic device 100 in the pri...

AI Technical Summary

Problems solved by technology

First, it contains too much wiring, the structure is very complicated, and it is not easy to manufacture

Second, because it completely relies on the Oersted magnetic field generated by the current to flip the magnetization direction of the ferromagnetic layer, in order to generate a strong enough Oersted magnetic field to achieve the flip, a large current needs to be applied, thus resulting in energy consumption of the logic device very high

Third, the Oersted magnetic field generated by the current may affect the normal operation of the surrounding electronic devices. figure 1 A magnetic shield structure is formed around the logic device, which makes the structure more complicated and increases the cost

The above drawbacks limit the practical application of this state-of-the-art spin logic device

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