Polarization controllable nano light source and its microscope system, photonic chip system
A nano-light source and polarization technology, applied in the fields of micro-nano optics and integrated optics, can solve the problem of failing to directly control the light emission polarization of the light source.
Active Publication Date: 2017-09-12
ZHEJIANG UNIV
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, the direct control of the light emission polarization of the light source has not been realized.
At the same time, these existing graphene waveguide polarization control devices are all for near-infrared light (wavelength greater than 1000nm), and there are no polarization control devices for visible light, and these devices have important applications in the fields of display, imaging, and sensing.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0027] Such as figure 1 The polarization controllable nano light source of the structure shown includes optical fiber 1 for introducing excitation light, semiconductor nanoribbon 2, single-layer graphene 3, deposited silicon oxide layer or silicon nitride layer 4, silicon substrate 5, electrode 6, graphite An electrode 7 on the ene, a nano light source outputting an optical signal 8 and an external signal source 9.
[0028] In this embodiment, the semiconductor nanobelt 2 is a CdSe nanobelt, which is specifically grown by chemical vapor deposition (CVD) under certain conditions such as temperature, air pressure, air flow, etc., and its optical properties are characterized as a graphene polarizer. Active materials for controlling nano light sources.
[0029] Single-layer graphene is prepared by exfoliation method and transferred to a silicon substrate deposited with a silicon oxide layer or a silicon nitride layer; or a single layer is directly grown on a silicon substrate dep...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a polarization controllable nanometer light source, comprising a substrate, a single layer grapheme arranged on the substrate, a first electrode and a second electrode which are respectively arranged on the rim of the graphene and the substrate, a semiconductor nanometer band placed on the single layer graphene, an optical fiber which introduces exciting light to irradiate one end of the semiconductor nanometer band, wherein the optical signal is outputted from the other end of the semiconductor nanometer band, and an external signal source for changing application voltage between the first electrode and the second electrode in order to regulate and control the output light polarization. The invention also discloses the microscopic system having the polarization controllable nanometer light source and the photon chip system. The invention provides a miniaturization and integration polarization controllable nanometer light source, which regulates the graphene Fermi energy level through the electric signal, changes the support state on the transmission light and thus realizes the polarization control on the semiconductor nanometer light source.
Description
technical field [0001] The invention relates to the fields of micro-nano optics and integrated optics, in particular to a polarization-controllable nanometer light source, a microscopic system, and a photonic chip system. Background technique [0002] With the development of microelectronics technology gradually reaching its physical limit, photon technology has become a new breakthrough point of information technology. The miniaturization and integration of photonic devices is an important development direction in this field. The miniaturization of passive photonic devices is relatively mature, while the miniaturization and integration of active devices, especially light sources, is the main problem, which has become a hot topic in international research. Semiconductor nanobelt / wire is an ideal nano light source, which has important applications in on-chip optical communication, super-resolution microscopy, high-sensitivity sensing, and high-resolution display. Although t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/12H01L31/0232
CPCH01L31/02327H01L31/125
Inventor 杨青徐鹏飞钱浩亮庞陈雷李海峰刘旭
Owner ZHEJIANG UNIV