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Method for preparing conductive thin film

A conductive film and film layer technology, applied in circuits, electrical components, carbon-silicon compound conductors, etc., can solve problems such as failure to meet performance requirements, unreasonable recycling, environmental pollution, etc., to achieve good economic and social benefits, production Low cost and good flexibility

Inactive Publication Date: 2016-09-07
CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are also some disadvantages in the use of indium tin oxide conductive films, including: (1) Indium resources are scarce, resulting in continuous price increases, making ITO an increasingly expensive material, such as spraying, pulsed laser deposition, electroplating, etc.
Moreover, indium oxide has certain toxicity, and unreasonable recycling can easily cause environmental pollution
(2) The brittle nature of ITO makes it unable to meet the performance requirements of some new applications (such as bendable flexible displays, touch screens, organic solar cells), and is not suitable for the production of next-generation flexible electronic devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A method for preparing conductive film, comprising the steps of:

[0023] A. deposited nickel layer

[0024] Deposit a nickel film layer with a thickness of 1 to 2 nickel atoms on a clean and dry glass substrate;

[0025] B. Deposit graphene layer

[0026] Adopt CVD method to deposit graphene thin film layer, the thickness of described graphene thin film layer is 40 μm; In described CVD method deposition process, carbon source is methane, and gas is the H that volume ratio is 2:1 2 A mixed gas with He; the volume ratio of the methane to the mixed gas is 8:1;

[0027] C. wash, dry

[0028] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned, the surface nickel film layer is removed, and then dried;

[0029] After testing, the light transmittance of the conductive film prepared in this embodiment is 85.7%.

Embodiment 2

[0031] A method for preparing conductive film, comprising the steps of:

[0032] A. deposited nickel layer

[0033] Deposit a nickel film layer with a thickness of 1 to 2 nickel atoms on a clean and dry glass substrate;

[0034] B. Deposit graphene layer

[0035] Adopt CVD method to deposit graphene thin film layer, the thickness of described graphene thin film layer is 60 μm; In described CVD method deposition process, carbon source is methane, and gas is the H that volume ratio is 5:1 2 A mixed gas with He; the volume ratio of the methane to the mixed gas is 10:1;

[0036] C. wash, dry

[0037] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned, the surface nickel film layer is removed, and then dried;

[0038] After testing, the light transmittance of the conductive film prepared in this embodiment is 85.2%.

Embodiment 3

[0040] A method for preparing conductive film, comprising the steps of:

[0041] A. deposited nickel layer

[0042] Deposit a nickel film layer with a thickness of 1 to 2 nickel atoms on a clean and dry glass substrate;

[0043] B. Deposit graphene layer

[0044] Adopt CVD method to deposit graphene thin film layer, the thickness of described graphene thin film layer is 55 μ m; In described CVD method deposition process, carbon source is methane, and gas is the H that volume ratio is 3:1 2 A mixed gas with He; the volume ratio of the methane to the mixed gas is 9:1;

[0045] C. wash, dry

[0046] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned, the surface nickel film layer is removed, and then dried;

[0047] After testing, the light transmittance of the conductive film prepared in this embodiment is 85.1%.

[0048] In step A of this embodiment, the ...

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Abstract

The invention discloses a method for preparing a conductive thin film, and belongs to the technical field of conductive thin film production. The method comprises the following steps of A, depositing a nickel layer: depositing a nickel thin film layer with a thickness which is equal to that of 1-2 nickel atoms on a glass substrate; B, depositing a graphene layer: depositing a graphene thin film layer by a CVD method, wherein the graphene thin film layer is 40-60[mu]m in thickness; in the CVD method deposition process, methane is used as the carbon source; the gas is a mixed gas of H<2> and He at a volume ratio of 2-5 to 1; and the volume ratio of methane to the mixed gas is 8-10 to 1; and C, cleaning and drying: reducing the temperature of the semifinished product obtained in the step B, then cleaning the graphene thin film layer after the temperature is reduced to the room temperature, next, removing the nickel thin film layer from the surface, and drying. Detection proves that the light transmittance of the conductive thin film prepared by the invention is greater than or equal to 85%. Compared with the prior art, the conductive thin film prepared by the invention has the advantages of low production cost, simple preparation method and high light transmittance.

Description

technical field [0001] The invention relates to a method for preparing a conductive film, which belongs to the technical field of conductive film production. Background technique [0002] With the development of science and technology, society's demand for new materials is also increasing. Materials are the material basis for the progress of human civilization and the development of science and technology. The renewal of materials has brought about great changes in people's lives. At present, the vigorous development of new transparent and conductive thin film materials has been widely used in liquid crystal displays, touch screens, smart windows, solar cells, microelectronics, information sensors and even military industries, and is penetrating into other technological fields. Since thin film technology is closely related to various technologies, scientists in various fields are interested in thin film preparation and its properties. [0003] Conductive film is a film tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B1/04
CPCH01B13/00H01B1/04
Inventor 何娟
Owner CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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