Preparation method for graphene conductive thin film

A technology of graphene film and conductive film, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, circuit, etc., can solve the problems of not meeting performance requirements, unreasonable recycling, and less indium resources, etc., and achieve good economy Benefits and social benefits, low production cost, clean and pollution-free surface

Inactive Publication Date: 2016-09-07
CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are also some disadvantages in the use of indium tin oxide conductive films, including: (1) Indium resources are scarce, resulting in continuous price increases, making ITO an increasingly expensive material, such as spraying, pulsed laser deposition, electroplating, etc.
Moreover, indium oxide has certain toxicity, and unreasonable recycling can easily cause environmental pollution
(2) The brittle nature of ITO makes it unable to meet the performance requirements of some new applications (such as bendable flexible displays, touch screens, organic solar cells), and is not suitable for the production of next-generation flexible electronic devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The preparation method of graphene conductive film, comprises the following steps:

[0023] A. deposited nickel layer

[0024] Deposit a nickel thin film layer with a nickel atom thickness on the glass substrate; the method of depositing the nickel thin film layer is the magnetron sputtering method, and the vacuum degree of the background: 1 × 10 -5 Pa, sputtering pressure 1Pa, substrate temperature 50°C.

[0025] B. Deposit graphene layer

[0026] Adopt CVD method to deposit graphene film layer, the thickness of described graphene film layer is 50 μ m;

[0027] C. wash, dry

[0028] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned, the surface nickel film layer is removed, and then dried.

Embodiment 2

[0030] The preparation method of graphene conductive film, comprises the following steps:

[0031] A. deposited nickel layer

[0032] Deposit a nickel thin film layer with a thickness of 3 nickel atoms on a glass substrate; the method for depositing a nickel thin film layer is magnetron sputtering, and the vacuum degree of the background: 1×10 -4 Pa, sputtering pressure 5Pa, substrate temperature 85°C.

[0033] B. Deposit graphene layer

[0034] Adopt CVD method to deposit graphene film layer, the thickness of described graphene film layer is 100 μ m;

[0035] C. wash, dry

[0036] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned, the surface nickel film layer is removed, and then dried.

Embodiment 3

[0038] The preparation method of graphene conductive film, comprises the following steps:

[0039] A. deposited nickel layer

[0040] Deposit a nickel thin film layer with a thickness of 2 nickel atoms on the glass substrate; the method of depositing the nickel thin film layer is magnetron sputtering, and the vacuum degree of the background: 4 × 10 -5 Pa, the sputtering pressure is 5Pa, and the substrate temperature is 65°C.

[0041] B. Deposit graphene layer

[0042] Adopt CVD method to deposit graphene film layer, the thickness of described graphene film layer is 60 μm;

[0043] C. wash, dry

[0044] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned, the surface nickel film layer is removed, and then dried.

[0045] In step B of this embodiment, in the process of depositing a graphene film layer by the CVD method, the carbon source is methane, and the ...

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Abstract

The invention discloses a preparation method for a graphene conductive thin film, and belongs to the technical field of conductive thin film production. The preparation method comprises the following steps of A, depositing a nickel layer: depositing a nickel thin film layer with a thickness which is equal to that of 1-3 nickel atoms on a glass substrate; B, depositing a graphene layer: depositing a graphene thin film layer by a CVD method, wherein the graphene thin film layer is 50-100[mu]m in thickness; and C, cleaning and drying: reducing the temperature of the semifinished product obtained in the step B, then cleaning the graphene thin film layer after the temperature is reduced to the room temperature, next, removing the nickel thin film layer from the surface, and drying. The preparation method has the advantages of low production cost and high efficiency.

Description

technical field [0001] The invention relates to a preparation method of a graphene conductive film, belonging to the technical field of conductive film production. Background technique [0002] With the development of science and technology, society's demand for new materials is also increasing. Materials are the material basis for the progress of human civilization and the development of science and technology. The renewal of materials has brought about great changes in people's lives. At present, the vigorous development of new transparent and conductive thin film materials has been widely used in liquid crystal displays, touch screens, smart windows, solar cells, microelectronics, information sensors and even military industries, and is penetrating into other technological fields. Since thin film technology is closely related to various technologies, scientists in various fields are interested in thin film preparation and its properties. [0003] Conductive film is a fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14C01B31/04
CPCH01B13/00H01B5/14
Inventor 何娟
Owner CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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