Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large power LED structure adopting COB packaging

An LED structure, high-power technology, applied in electrical components, electrical solid devices, circuits, etc., can solve problems such as poor heat transfer, low thermal conductivity of insulating layers, etc., to improve heat dissipation performance, reduce chip junction temperature, and improve heat dissipation performance. Effect

Inactive Publication Date: 2016-09-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the defects in the background technology, the present invention proposes a high-power LED structure using COB packaging, which effectively solves the problem of poor heat transfer caused by the low thermal conductivity of the insulating layer in the traditional COB packaging structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large power LED structure adopting COB packaging
  • Large power LED structure adopting COB packaging
  • Large power LED structure adopting COB packaging

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0040]A high-power LED structure adopting COB packaging, including a radiator 2, an LED chip structure 3 and an encapsulation layer 1 located on the radiator; the encapsulation layer 1 is a mixture of epoxy resin and phosphor powder; the heat dissipation The radiator 2 is a ceramic radiator, the size of the radiator is 10mm*10mm*1.5mm, the spacing of the fins of the radiator will affect the convection with the air, the thickness of the fins will affect the contact area with the air, and then affect the performance of the radiator and chip junction temperature, this embodiment is optimized in many ways to set the thickness of the radiator fins to 0.5mm, the height to 8mm, and the spacing to 1mm; the spacing of the LED chips will affect the temperature gradient on the surface of the radiator and the junction temperature of each chip The distribution will also affect the maximum value and average value of the illuminance. In this embodiment, after multiple optimizations, the horiz...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a large power LED structure adopting COB packaging and belongs to the technical field of optoelectronic devices. The large power LED structure includes a radiator, and a LED chip structure and a packaging layer which are arranged on the radiator. The radiator is characterized by electrical isolation. The large power LED structure, compared with current LED structures, removes an insulation layer, a metal substrate, and a heat conduction silica gel layer, shortens a heat transfer path, improves heat radiation performances, and reduces chip junction temperature. According to the invention, the packaging layer of the large power LED structure has an undulated surface of protrusions or / and indentations, which effectively increases the efficiency of light extraction. According to the invention, the radiator of the large power LED structure has a surface which is provided with grooves, which further shortens the heat radiation path and increases heat radiation performances. According to the invention, the large power LED structure has low manufacturing cost and simple structure, and is conducive to large scale mass production.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to a high-power LED structure adopting COB packaging. Background technique [0002] Light Emitting Diode (LED) has the advantages of small size, long life, low power consumption, and good stability, and has been widely used in daily life such as lighting, backlight display, and automobile lights. At present, high-power LED is the most widely used, but with the increase of chip power, the problem of heat dissipation of high-power LED becomes more and more serious. The heat that builds up on an LED chip not only affects its electronic performance, but also its brightness and color. As the temperature rises, the spectrum will red-shift and the luminous efficiency will decrease; and if the temperature is too high, the efficiency and life of the phosphor will be reduced, resulting in poor luminous performance of the LED chip, low life and even permanent damage...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/13H01L33/48H01L33/54H01L33/64
CPCH01L25/13H01L33/48H01L33/54H01L33/642H01L2933/0075H01L2933/005H01L2933/0033H01L2224/48091H01L2224/48137H01L2924/00014
Inventor 周伟刘志强张小六张先伟赵建明邹泽亚周杨昆
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com