Intelligent IGBT (insulated gate bipolar transistor) constant-current driving device

Abstract

The invention discloses an intelligent IGBT (insulated gate bipolar transistor) constant-current driving device. The intelligent IGBT constant-current driving device comprises an isolation DC (direct current)-DC module, a PLD (programmable logic device) digital control module, a DAC (digital-to-analog converter) module, a controlled constant-current source, a voltage comparison logic circuit, a gate-level current acquisition circuit and a current comparison logic circuit. A driving power source and a driving signal of a primary side control portion provide an isolated driving power source and a driving signal for a secondary side through the isolation DC-DC module, and an alarming signal of the secondary side provides an isolated alarming signal for the primary side through the isolation DC-DC module. Output ends of the driving signals, the voltage comparison logic circuit and the current comparison logic circuit are connected with an input end of a PLD digital signal, output of PLD is connected with input of the DAC module, outputs of the DAC module and a subtraction circuit are connected with input of the controlled constant-current source, and output of the controlled constant-current source is connected with gate level of IGBT. On the basis of PLD digital control, output of a control circuit can be regulated according to parameter differences of different types of IGBTs to realize optimal control of different series and different types of the IGBTs.

Description

technical field [0001] The invention relates to an IGBT drive circuit, in particular to an intelligent IGBT constant current drive device. Background technique [0002] With the rapid development of power electronics technology and semiconductor technology, power electronics technology continues to penetrate into new fields. The insulated gate bipolar transistor IGBT (Insulated Gate Bipo1ar Transistor) not only has the advantages of fast working speed, high input impedance, simple drive circuit and good thermal stability of MOSFET, but also includes the advantages of large carrying capacity and high blocking voltage of GTR. Advantages, it is an ideal switching device to replace GTR. Therefore, its application range in modern power electronics technology is becoming more and more extensive. Today, the rated current and rated voltage of IGBT have been increased to 3600A and 6500V respectively, and modern megawatt-level converters composed of high-power IGBTs are widely used ...

AI Technical Summary

Problems solved by technology

As the capacitor voltage rises, the charging current will inevitably decrease, especially in the Miller plateau stage, the difference between the gate capacitor voltage and the charging voltage is already very small, and the charging current is also relatively small, so it is impossible to reduce the switching delay to the greatest extent. and Miller plateau times, reducing switching losses

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