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Cleaning technology for back plating wafers

A wafer and back-plating technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of time-consuming and other problems, and achieve the effects of simple equipment, improved adhesion and low cost

Active Publication Date: 2016-09-14
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the low efficiency and time-consuming problems of the existing front-side coated photoresist protection pickling and ammonia water hydrogen peroxide mixed solution heating and cleaning methods, the present invention provides a thorough cleaning and high-efficiency wafer back-plating cleaning process, mainly for Cleaning of back-plated sapphire wafers

Method used

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  • Cleaning technology for back plating wafers
  • Cleaning technology for back plating wafers
  • Cleaning technology for back plating wafers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038]Embodiment 1: A cleaning process before the back plating of a sapphire wafer, including oxygen plasma cleaning, dilute hydrochloric acid cleaning, water washing and drying, after cleaning by this method, a new, easy-to-adhesive interface can be completely presented on the back of the sapphire wafer . Including the following steps:

[0039] (1) Place the sapphire wafer in an oxygen plasma cleaning machine for oxygen plasma cleaning treatment. Requirements: the back of the sapphire wafer faces the plasma radio frequency concentration surface, the oxygen plasma radio frequency power is 900w, and the 5N oxygen flow rate used is 30sccm , RF cleaning time is 5min.

[0040] (2) Preparation of dilute hydrochloric acid solution: take 37% hydrochloric acid and water in a volume ratio of 1:10 to prepare a dilute hydrochloric acid solution.

[0041] (3) Cleaning with dilute hydrochloric acid: place the sapphire wafer in the dilute hydrochloric acid solution prepared in (2) and let...

experiment example

[0060] Through the sapphire wafer cleaned by the method of above-mentioned embodiment 1, the back plating of DBR is carried out on its back side according to the prior art, the result shows: the adhesiveness of its back coating layer is good; ) compared with the method (comparative example 2) that does not carry out the cleaning of dilute hydrochloric acid, drop the back plating ratio and reduce respectively 2.4%, 13.4%; The yield rate of corresponding chip improves 2.4%, 13.4%. The experimental results are shown in Table 1:

[0061] Table 1. Comparison of cleaning process effects before different back plating

[0062] cleaning process

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Abstract

The invention relates to a cleaning technology for back plating wafers. The cleaning method comprises the steps of oxygen plasma cleaning, diluted hydrochloric acid solution cleaning, washing and drying. The wafers cleaned through the method are clean in the back faces and higher in adhesivity, so that the reliability and stability for back plating are guaranteed, and the yield of chips is improved; and the production method of the cleaning method is obviously improved, and the cleaning technology is used for cleaning sapphire wafers before back plating technology.

Description

technical field [0001] The invention relates to a cleaning process before back plating of a sapphire wafer, which belongs to the technical field of semiconductor processing. Background technique [0002] With the rapid development of all walks of life in modern society and economy, energy conservation and environmental protection have become a major issue worldwide. The ever-increasing consumption of the lighting industry, which is closely related to people's lives, has to arouse people's attention. The rapid development of energy-saving and environmentally friendly semiconductor lighting has just successfully solved this problem in the lighting industry, and semiconductor lighting has become the main theme of the entire lighting industry. The large-scale promotion of high-brightness multi-functional LED lighting meets the requirements of the lighting industry, energy saving and environmental protection, and has been greatly developed. In September 1999, the "China Green L...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L33/00
CPCH01L21/02057H01L21/0209H01L21/02096H01L33/0095
Inventor 徐晓强彭璐闫宝华刘琦
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS