Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Composition for forming manganese- and niobium-doped PZT piezoelectric film

A piezoelectric film and film thickness technology, which can be used in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., and can solve the problems of poor stability of polarization state, insufficient stability, and small spontaneous polarization value. , to achieve the effect of reducing the manufacturing workload

Inactive Publication Date: 2016-09-14
MITSUBISHI MATERIALS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, although the self-polling phenomenon can be observed by the film-forming method described in the above-mentioned Non-Patent Document 1, its spontaneous polarization value is small, and it is still insufficient for practical use.
[0013] In addition, in the technique of improving the piezoelectric properties of the PZT thin film by adding Nb shown in the above-mentioned Non-Patent Document 2, a Nb-doped PZT thin film (PNbZT thin film) is formed by a wet method, that is, a CSD method using a sol-gel solution. ), the piezoelectric constant increases
On the other hand, it is impossible to obtain a film whose polarization direction is consistent immediately after film formation, and when used as a sensor, there is a disadvantage that the stability of the polarization state is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composition for forming manganese- and niobium-doped PZT piezoelectric film
  • Composition for forming manganese- and niobium-doped PZT piezoelectric film
  • Composition for forming manganese- and niobium-doped PZT piezoelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0070] Next, examples of the present invention will be described in detail together with comparative examples.

[0071]

[0072] First, lead acetate trihydrate (Pb source) and propylene glycol (diol) are put into a reaction vessel, and after refluxing for 1 hour at a temperature of 150° C. in a nitrogen atmosphere, 2-ethane is further added to the reaction vessel. Manganese hexanoate (Mn source), Niobium pentaethoxide (Nb source), Zirconium tetrabutoxide (Zr source), Titanium tetraisopropoxide (Ti source) and acetylacetone (stabilizer), in a nitrogen atmosphere Reflux was performed at a temperature of 150°C for 1 hour to make a reaction, thereby preparing a synthetic solution. Among them, the ratio of metal atoms in the liquid (Pb:Mn:Nb:Zr:Ti) to the value shown in Table 1 below, compared to the lead acetate trihydrate (Pb source), 2-ethylhexanoic acid The PZT-based precursors of manganese (Mn source), pentaethoxyniobium (Nb source), tetrabutoxyzirconium (Zr source), and tetrais...

Embodiment 2～8

[0077] With the ratio of metal atoms in the liquid (Pb:Mn:Nb:Zr:Ti) to the values ​​shown in Table 1 below, the ratio of lead acetate trihydrate (Pb source) and manganese 2-ethylhexanoate (Mn Source), niobium pentaethoxide (Nb source), zirconium tetrabutoxide (Zr source), and titanium tetraisopropoxide (Ti source). PZT precursors were weighed. 1 The composition was prepared in the same manner to form a piezoelectric film. The piezoelectric films formed in Examples 2 to 8 had the compositions shown in Table 3 below.

[0078]

[0079] The PZT-based precursor as the source of Mn and Nb is not used, and the ratio of metal atoms in the liquid (Pb:Mn:Nb:Zr:Ti) to the value shown in Table 1 below is used for lead acetate trihydrate (Pb source), zirconium tetrabutoxide (Zr source), and titanium tetraisopropoxide (Ti source) each PZT-based precursor was weighed, except that the composition was prepared in the same manner as in Example 1 to form 了piezo film. In addition, the piezoelectri...

Embodiment 9

[0086] First, put lead acetate trihydrate (Pb source) and propylene glycol (diol) into a reaction vessel, and after refluxing for 1 hour at a temperature of 150° C. in a nitrogen atmosphere, the reaction vessel was further added with 2- Manganese ethylhexanoate (Mn source), Niobium pentaethoxide (Nb source), Zirconium tetrabutoxide (Zr source), Titanium tetraisopropoxide (Ti source) and acetylacetone (stabilizer), in nitrogen In the atmosphere, reflux was performed at a temperature of 150°C for 1 hour to make a reaction, thereby preparing a synthetic liquid. Among them, the ratio of metal atoms in the liquid (Pb:Mn:Nb:Zr:Ti) to the value shown in Table 2 below, compared to the lead acetate trihydrate (Pb source), 2-ethylhexanoic acid The PZT-based precursors of manganese (Mn source), pentaethoxyniobium (Nb source), tetrabutoxyzirconium (Zr source), and tetraisopropoxide titanium (Ti source) were weighed. In addition, propylene glycol (diol) was added so as to be 16% by mass re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
pore sizeaaaaaaaaaa
Login to View More

Abstract

This invention is a composition used to form a PZT piezoelectric film that comprises a manganese- and niobium-doped complex metal oxide. Said composition contains a PZT precursor such that the atomic proportions of the metals lead, manganese, niobium, zirconium, and titanium in the composition are 1.00 to 1.25, 0.002 to 0.056, 0.002 to 0.056, 0.40 to 0.60, and 0.40 to 0.60, respectively; the atomic proportion of manganese is 20% to 80% of the total atomic proportion of manganese and niobium; the atomic proportion of zirconium is 40% to 60% of the total atomic proportion of zirconium and titanium; and the total atomic proportion of zirconium and titanium is 93.00% to 99.02% of the total atomic proportion of manganese, niobium, zirconium, and titanium.

Description

Technical field [0001] The invention relates to a PZT-based piezoelectric film doped with Mn and Nb for piezoelectric elements, integrated passive devices (IPD, Integrated Passive Devices), pyroelectric elements and the like. [0002] This application claims priority based on patent application No. 2014-067840 filed in Japan on March 28, 2014, and uses the content here. Background technique [0003] Ferroelectric films such as PZT formed by the chemical solution deposition (CSD) method represented by the sol-gel method cannot be directly used as piezoelectric bodies after film formation. In order to be used in gyroscope sensors, etc. Perform polarization treatment. When the ferroelectric film is used in a sensor such as a pyroelectric sensor or a gyro sensor, the performance index g of the piezoelectric film (ferroelectric film) used is expressed by the following formula (1). [0004] g(V·m / N)=d 31 / ε 33 (1) [0005] In formula (1), d 31 Represents the piezoelectric constant, ε 33 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/187C04B35/491H01L41/318C01G25/00H10N30/853H10N30/078H10N30/20H10N30/30
CPCC04B35/491C01G25/006C01P2002/50C01P2002/52C04B35/62218C04B2235/3251C04B2235/3262H10N30/8554H10N30/078C04B35/493C04B2235/3234C04B2235/3249C04B2235/3255C04B2235/3268C04B2235/3296
Inventor 土井利浩樱井英章曽山信幸
Owner MITSUBISHI MATERIALS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com