Ion beam etching machine and etching method thereof

Abstract

The invention relates to an ion beam etching machine. The ion beam etching machine comprises a vacuum working cavity, a workpiece installation platform, a multi-axis movement system and an ion source, wherein the multi-axis movement system comprises a plurality of linear movement modules connected in sequence, the adjacent linear movement modules are vertical to one another, the linear movement modules comprise linear guide rails and linear movement elements, and the backward-stage linear movement module is connected with the preceding-stage linear movement element and can carry out linear movement under the driving of the preceding-stage linear movement element; the ion source is installed on the last-stage linear movement element; an ion beam can be formed by the ion source and scans in a moving manner along a plurality of directions to etch workpieces under the driving of the multi-axis movement system. The ion source is installed on the multi-axis movement system capable of moving in multiple directions, the ion beam can scan in the moving manner to etch the workpieces, and the ion beam etching machine can complete etching processing for the workpieces with large dimensions by using the ion source with relatively small diameter, so that the requirement of the ion beam etching machine for ion source diameter is effectively reduced, and the equipment cost is reduced.

Description

technical field [0001] The invention belongs to the field of ion beam processing equipment, and in particular relates to an ion beam etching machine and an etching method thereof. Background technique [0002] At present, ion beam etching (IBE) technology is a dry etching process developed in the 1970s. and other micro-processing. Ion beam etching uses a low-energy parallel Ar+ ion beam to bombard the substrate surface, sputtering out the part of the substrate surface not covered by the mask, so as to achieve the purpose of selective etching. Ion beam etching is a purely physical process, which has the advantages of high resolution and the best steepness in various conventional etching methods, and can etch most materials, such as metals, alloys, oxides, compounds , semiconductors, insulators and other materials. [0003] With the improvement of the output energy of the strong laser system, the size of some optical components has reached 0.5m or even 1m. The large-s...

AI Technical Summary

Problems solved by technology

However, with the increase in the size of the etched substrate, the size of the ion source is required to be larger and larger. Often, a large-diameter bar-shaped ion source is used to solve the problem of etching a large-sized substrate, but the large-diameter bar-shaped ion source The ion source is difficult to manufacture and the cost is high, resulting in expensive ion beam etching equipment

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