Novel NTC thermistor material suitable for low temperature preparation

A thermistor and raw material technology, applied in the direction of resistors with negative temperature coefficient, resistors, non-adjustable metal resistors, etc., can solve the problems affecting material performance and service life, unstable electrical performance, material aging, etc. Achieve environmental friendliness, low sintering temperature, and simple material composition

Inactive Publication Date: 2016-09-28
CENT SOUTH UNIV
View PDF9 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This relaxation phenomenon causes the instability of the electrical properties of the NTC ceramic material, which easily leads to the aging of the material and affects the performance and service life of the material.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel NTC thermistor material suitable for low temperature preparation
  • Novel NTC thermistor material suitable for low temperature preparation
  • Novel NTC thermistor material suitable for low temperature preparation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] This embodiment according to the molecular formula Cu 1-x-y Y x Ti y O was dosed where x=0.008, y=0.01. The initial raw material is selected from copper hydroxide Cu(OH) 2 , tetrabutyl titanate TBT, diyttrium trioxide Y 2 o 3 . Material preparation is carried out according to the technological steps of following experiment:

[0021] (1) Press Cu 0.982 Y 0.008 Ti 0.01 O formula ingredients, take the initial raw material Cu(OH) 2 19.1580g, Y 2 o 3 0.1806g, TBT 0.6806;

[0022] (2) Copper hydroxide, 100 million oxide, and butyl titanate raw materials taken by weighing in the previous step are dissolved in dilute nitric acid respectively;

[0023] (3) Mix the three solutions prepared in the previous step together, and use a magnetic stirring heater to stir and mix evenly, heat and dry;

[0024] (4) Calcining the precursor powder prepared in the previous step at a temperature of 830° C. and keeping it warm for 6 hours;

[0025](5) Granulating and pressing the...

Embodiment 2

[0031] This embodiment according to the molecular formula Cu 0.992-y Y 0.008 Ti y O was dosed where y=0.015. The initial raw material is selected from copper hydroxide Cu(OH) 2 , Oxygen Y 2 o 3 , Butyl titanate TBT. Material preparation is carried out according to the technological steps of following experiment:

[0032] (1) Press Cu 0.977 Y 0.008 Ti 0.01 O formula ingredients, take the initial raw material Cu(OH) 2 19.0605g, Y 2 o 3 0.1806g, TBT 1.0209g;

[0033] (2) The preparation process is the same as steps (2)-(8) in Example 1.

[0034] The properties of the prepared materials are shown in Table 1. figure 1 and figure 2 shown.

Embodiment 3

[0036] This embodiment according to the molecular formula Cu 0.992-y Y 0.008 Ti y O was dosed where y=0.03. The initial raw material is selected from copper hydroxide Cu(OH) 2 , Oxygen Y 2 o 3 , Butyl titanate TBT. Material preparation is carried out according to the technological steps of following experiment:

[0037] (1) Press Cu 0.962 Y 0.008 Ti 0.03 O formula ingredients, take the initial raw material Cu(OH) 2 18.9629g, Y 2 o 3 0.1806g, TBT 2.0418g;

[0038] (2) The preparation process is the same as steps (2)-(8) in Example 1.

[0039] The properties of the prepared materials are shown in Table 1. figure 1 and figure 2 shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a semiconductor ceramic material, and especially relates to a thermistor material which can prepare a thermistor element with negative temperature coefficient (NTC) resistance. Simple oxides are used as main components in the NTC thermistor material; the material can be sintered into a ceramic body below 1000 DEG C, and is adapted to be sintered and moulded into temperature-sensitive ceramic elements, film temperature-sensitive elements, and low temperature co-sintered laminated temperature-sensitive elements. Contents of trace doped elements can be changed in order to adjust room temperature resistivity and NTC material constant of the thermistor element. The thermistor material has the characteristics of good stability, good consistency, and good repeatability, and has controllable resistance value, material constant, resistance temperature coefficient and other electrical characteristics; the thermistor material is suitable for temperature measurement, temperature control and line compensation, as well as protection of circuits and electronic components, and the fields of apparatus and application of measurements of flow velocity, flow, and ray.

Description

technical field [0001] The invention relates to an NTC thermistor material for preparing a thermistor element with a negative temperature coefficient (NTC) effect of resistance. Applicable to temperature measurement, temperature control and line compensation, as well as protection of circuits and electronic components, as well as instruments and applications for flow velocity, flow, and ray measurement. It is not only suitable for granary thermometers, but also can be used for temperature measurement in food storage, medicine and health, scientific farming, oceans, deep wells, high altitudes, glaciers, etc. Background technique [0002] Thermal sensors are devices made using the characteristics of material resistivity that changes with temperature, including positive temperature coefficient (PTC) thermistors whose resistivity increases with temperature or those whose resistivity decreases with temperature Negative Temperature Coefficient (NTC) Thermistor Element. NTC therm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/45C04B35/622H01C7/04
CPCC04B35/4504C04B35/622C04B2235/3225C04B2235/3232C04B2235/3281H01C7/043
Inventor 杨宝李志成张鸿
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products