Semiconductor structure and forming method thereof

Abstract

A semiconductor structure and a forming method thereof, the forming method of the semiconductor structure comprising: providing a semiconductor substrate; forming a shallow trench isolation structure in the semiconductor substrate; forming a first dummy gate structure, the first dummy gate The structure includes a first gate dielectric layer, a cap layer located on the surface of the first gate dielectric layer, and a dummy gate located on the surface of the first cap layer. The first dummy gate structure is partly located on the surface of the shallow trench isolation structure and partly located on the semiconductor substrate On the bottom surface, the material of the first capping layer includes silicon-doped titanium nitride. The methods described above can improve the performance of the semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous improvement of the integration level of semiconductor devices and the reduction of technology nodes, the traditional gate dielectric layer continues to become thinner, and the leakage of transistors increases accordingly, causing problems such as waste of power consumption of semiconductor devices. In order to solve the above problems, the prior art provides a solution of replacing the polysilicon gate with a metal gate. Among them, the "gate last" process is a main process for forming high-K metal gate transistors. [0003] The "gate last" process includes two methods: "high-K first" and "high-K last". Wherein, the "high-K first (high-K first)" method includes: including: providing a semiconductor substrate, a dummy gate structure is formed on the semiconductor subs...

AI Technical Summary

Problems solved by technology

[0005] In the semiconductor structure formed by the above method in the prior art, the capping layer in the semiconductor structure is often damaged in the subsequent cleaning process, thereby affecting the performance of the formed semiconductor structure

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