Method for quickly preparing rough laminar pyrolytic carbon
A rough layer, pyrolysis carbon technology, applied in the field of carbon materials, can solve the problems of uneven structure, slow cracking rate, uneven heating, etc., and achieve the effect of stable structure, lower production cost, and uniform structure
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[0048] Example 1
[0049] This embodiment provides a method for rapidly preparing rough layer pyrolysis carbon. The method includes the following steps:
[0050] Using microwaves to heat the preform and the silicon carbide tube at the same time so that the temperature of the preform (that is, the temperature of the deposition zone) is 1200°C, and the carbon source gas passing through the silicon carbide tube undergoes a cracking reaction, so that A rough layer of pyrolytic charcoal is grown on the surface of the preform. Among them, the structure of the silicon carbide tube is as figure 1 , 2 As shown, the silicon carbide tube includes a heat-insulating core layer, a first silicon carbide layer, a channel layer, a second silicon carbide layer, and a heat-insulating layer, which extends from the center of the tube to the outer wall of the tube. The silicon layer is sleeved on the surface of the thermal insulation core layer, the thermal insulation layer is sleeved on the surface o...
Example Embodiment
[0051] Example 2
[0052] This embodiment provides a method for rapidly preparing rough layer pyrolysis carbon. This method refers to the method in Example 1, but the difference is that the distance between the first silicon carbide layer and the second silicon carbide layer contained in the silicon carbide tube is 2 cm, and N 2 It is a dilution gas, natural gas is a carbon source gas, the mass concentration of carbon source is 20-40%, the temperature of the deposition zone is controlled to 1100℃, the system vacuum is 60KPa, the deposition is 30 minutes, the thickness of pyrolytic carbon reaches 24 microns, and the microstructure is Rough layer structure, such as Figure 5 Shown.
Example Embodiment
[0053] Example 3
[0054] This embodiment provides a method for rapidly preparing rough layer pyrolysis carbon. This method refers to the method in Example 1, but the difference is that the distance between the first silicon carbide layer and the second silicon carbide layer contained in the silicon carbide tube is 3 cm, and N 2 It is the dilution gas, methane is the carbon source gas, the mass concentration of the carbon source is 50-60%, the temperature of the deposition zone is controlled to 1150℃, the vacuum degree of the system is 80KPa, the deposition is 2 hours, the thickness of pyrolytic carbon reaches 230 microns, and the microstructure is rough layer Structure like Image 6 Shown.
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