Quantum dot ink

A quantum dot and quantum dot light-emitting technology, which is applied to inks, electrical components, household appliances, etc., can solve the problems of insufficient stability of the quantum dot layer and low lifespan, and achieve the effect of good luminescence performance and long lifespan

Active Publication Date: 2016-10-12
SUZHOU XINGSHUO NANOTECH CO LTD
View PDF2 Cites 34 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of physical connection can easily lead to insuffi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] The invention also discloses a method for preparing quantum dot ink, which includes mixing a solvent, a surface tension regulator, a charge transport agent and a polymerizable quantum dot in a predetermined ratio to form a quantum dot ink.

[0034] The invention discloses a quantum dot light-emitting diode, which comprises a quantum dot light-emitting layer, which is characterized in that the quantum dot light-emitting layer is printed with the quantum dot ink described above.

[0035] In the quantum dot light-emitting layer of the present invention, the mass fraction of the quantum dots is at least 50 wt%. In a preferred embodiment, the mass fraction of quantum dots in the quantum dot light-emitting layer is at least 80% by weight.

[0036] The quantum dot ink provided by the present invention can realize the inkjet printing mode of the quantum dot light-emitting layer, and obtain the quantum dot light-emitting layer with pixel lattice, high resolution and electro-excitation....

Embodiment 1

[0040] A quantum dot ink, in which the quantum dot is surface-modified with SH-CO-O-(CH 2 -CH 2 -O) 2 -CO-CH=CH 2 CdSe / ZnS quantum dots, the sulfhydryl group is coordinated with the quantum dots, the content is 15wt%; the charge transport agent is polyvinylcarbazole, the content is 8wt%; the solvent is high-purity chlorobenzene and dimethylformamide, the content is 74wt%; the surface active agent is polyethylene glycol monobutyl ether and acetylene polyethylene oxide, the content is 1wt%; the surface tension regulator is glycerin, the content is 1wt%; the initiator is vinyl ether, the content is 1wt%.

Embodiment 2

[0042] The quantum dot ink described in Example 1 was printed on a polymethacrylic acid substrate, the solvent was volatilized, and UV light was applied for 1 minute to form a quantum dot light-emitting layer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides quantum dot ink which comprises polar solvent, a surface tension adjusting agent, a charge transmission agent and quantum dots, and the quantum dots are polymerizable. After the quantum dot ink is printed, a more stable quantum dot light-emitting layer can be obtained, a long service life is achieved, and better light-emitting performance is achieved. The invention further provides a quantum dot light-emitting diode and a preparation method thereof.

Description

Technical field [0001] The invention relates to a quantum dot ink. The invention also relates to a quantum dot light emitting diode. Background technique [0002] Quantum dots, also known as nanocrystals, are materials with a size of a few nanometers, usually in the range of 1-20 nanometers, and a crystal structure. Quantum dots can emit fluorescence when excited by a suitable light source or voltage. Quantum dots have been extensively studied in the past two decades due to their special characteristics, such as tunable optical properties, high quantum efficiency, relatively narrow half-peak width and resistance to photodegradation. [0003] Quantum Dots Light Emitting Diode Displays (QLED) is a new type of display technology. The principle is that electrons are injected into the quantum dot layer through the electron transport layer, and holes are injected into the quantum dot layer through the hole transport layer. Holes recombine and emit light in quantum dots. QLED has the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09D11/38C09D11/36H01L33/06H01L33/26H01L33/00
CPCC09D11/36C09D11/38H01L33/005H01L33/06H01L33/26
Inventor 王允军
Owner SUZHOU XINGSHUO NANOTECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products