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Cu-Ga alloy sputtering target

A sputtering target, cu-ga technology, applied in sputtering coating, metal material coating process, ion implantation coating and other directions, can solve the problems of high cost, difficulty in high density, complicated process, etc., and it is not easy to achieve Damage and excellent usability

Inactive Publication Date: 2016-10-12
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Voids not only cause abnormal discharge, but also make it difficult to increase the density, and become the cause of cracks and chips during cutting or sputtering
Japanese Patent Laid-Open No. 2008-138232 (Patent Document 1) discloses a method of mixing high-concentration Ga powder and low-concentration Ga powder and sintering to form a two-phase structure in order to prevent segregation that causes cracking, but the process is complicated and the cost is high

Method used

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  • Cu-Ga alloy sputtering target
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Examples

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Embodiment

[0063] Hereinafter, examples are given for better understanding of the present invention and its advantages, but the present invention is not limited by these examples.

[0064] (1. Vertical continuous casting: Examples 1 to 6, Comparative Example 1)

[0065] use as Figure 8The shown vertical continuous casting device with the structure of high-frequency induction heating coil, graphite crucible and water-cooled probe manufactured a cylindrical Cu-Ga alloy sputtering target with an outer diameter of 159mm, a thickness of 14mm, and a height of 650mm.

[0066] 35 kg of Cu-Ga alloy raw materials of various components were introduced into the crucible, and the inside of the crucible was heated to 1100° C. in an argon atmosphere. The purpose of this high-temperature heating is to fuse the cylindrical dummy ingot and the Cu—Ga alloy molten metal installed at the bottom of the crucible.

[0067] After the raw material is melted, the temperature of the molten metal is lowered to 96...

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Abstract

The invention provides a columnar crystal Cu-Ga alloy sputtering target high in strength. The Cu-Ga alloy sputtering target contains Ca with the content higher than 25.0 atom% and lower than 29.5 atom%, the balance is composed of Cu and unavoidable impurities, and the orientation of (112) surface of a [zeta] phase is 25%-60%.

Description

technical field [0001] The invention relates to a Cu-Ga alloy sputtering target. In particular, the present invention relates to a Cu-Ga alloy sputtering target used when forming a Cu-In-Ga-Se (hereinafter referred to as CIGS) quaternary alloy thin film as a light-absorbing layer of a thin-film solar cell layer . Background technique [0002] In recent years, mass production of CIGS-based solar cells with high photoelectric conversion efficiency is progressing as thin-film solar cells. CIGS-based thin-film solar cells generally have a structure in which a back electrode, a light-absorbing layer, a buffer layer, and a transparent electrode are sequentially laminated. A vapor deposition method and a selenization method are known as methods for producing the light-absorbing layer. Solar cells manufactured by evaporation method have the advantages of high conversion efficiency, but have the disadvantages of low film forming speed, high cost, and low productivity. The seleniza...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22C9/00
CPCC22C9/00C23C14/3407
Inventor 卫藤雅俊
Owner JX NIPPON MINING & METALS CO LTD