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Method for growing Ni-containing film through single atomic layer deposition (ALD) technology

A single atomic layer, technical technology, applied in coating, metal material coating process, gaseous chemical plating and other directions, can solve the problems of difficult formation of Ni silicide deposition layer, metal silicide can not meet the demand, etc., to achieve volatile Good, low cost, high thermal decomposition temperature effect

Active Publication Date: 2016-10-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the traditional PVD method to deposit Ni to form metal silicide can no longer meet the demand
Especially when the silicon material in the source and drain regions is Fin or nanowires, the Ni silicide deposition layer deposited by PVD method is difficult to form

Method used

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  • Method for growing Ni-containing film through single atomic layer deposition (ALD) technology
  • Method for growing Ni-containing film through single atomic layer deposition (ALD) technology
  • Method for growing Ni-containing film through single atomic layer deposition (ALD) technology

Examples

Experimental program
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Effect test

Embodiment 1

[0051] A Ni(acac) 2 (TMEDA) is Ni source, with N 2 h 4 Be the Ni thin film atomic layer deposition method of reducing agent, comprise following process:

[0052] 1) With Si as the substrate, the deposition temperature is 250°C, Ni source Ni(acac) 2 The heating temperature of (TMEDA) is 90°C to vaporize it, and high-purity nitrogen is used as the carrier gas, and the gas phase Ni source Ni(acac) is passed into it. 2 (TMEDA), the carrier gas flow rate is 20 sccm. The pulse time is 12s, and the waiting time is 10s;

[0053] 2) Use high-purity nitrogen to clean after completing a pulse, and the cleaning time is 25s;

[0054] 3) Reducing agent N 2 h 4 The heating temperature is 60°C to vaporize it, using high-purity nitrogen as the carrier gas, the flow rate of the carrier gas is 60 sccm, and N is introduced in pulse form. 2 h 4 . The pulse time is 5s, and the waiting time is 15s;

[0055] 4) Use high-purity nitrogen to clean after completing a reducing agent pulse, and ...

Embodiment 2

[0059] A Ni(acac) 2 (TMEDA) is Ni source, with Me 2 NH·BH 3 Be the Ni thin film atomic layer deposition method of reducing agent, comprise following process:

[0060] 1) with SiO 2 As the substrate, the deposition temperature is 300°C, the Ni source Ni(acac) 2 The heating temperature of (TMEDA) is 150°C to vaporize it, and high-purity argon is used as the carrier gas, and the gas phase Ni source Ni(acac) is passed into it. 2 (TMEDA), the carrier gas flow rate is 90 sccm. The pulse time is 5s, and the waiting time is 20s;

[0061] 2) After completing a pulse, use high-purity argon to clean, and the cleaning time is 45s;

[0062] 3) Reductant Me 2 NH·BH 3 The heating temperature is 90°C to vaporize it, and high-purity argon is used as the carrier gas, and the flow rate of the carrier gas is 10 sccm, and the Me 2 NH·BH 3 . The pulse time is 15s, and the waiting time is 5s;

[0063] 4) Use high-purity nitrogen to clean after completing a reducing agent pulse, and the c...

Embodiment 3

[0066] A Ni(acac) 2 (TMEDA) as Ni source, with CH 3 OH is the Ni thin film atomic layer deposition method of reducing agent, comprises following process:

[0067]1) With silicon nitride as the substrate, the deposition temperature is 350°C, Ni source Ni(acac) 2 The heating temperature of (TMEDA) is 120°C to vaporize it, and high-purity argon is used as the carrier gas, and the gas phase Ni source Ni(acac) is passed into it. 2 (TMEDA), the carrier gas flow rate is 120 sccm. The pulse time is 8s, and the waiting time is 5s;

[0068] 2) After completing a pulse, use high-purity argon to clean, and the cleaning time is 15s;

[0069] 3) Reductant CH 3 The heating temperature of OH is 25°C to vaporize it, using high-purity argon as the carrier gas, the flow rate of the carrier gas is 160 sccm, and CH is introduced in the form of pulses 3 Oh. The pulse time is 20s, and the waiting time is 10s;

[0070] 4) Use high-purity nitrogen to clean after completing a reducing agent pul...

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Abstract

The invention provides a method for growing a Ni-containing film through a single atomic layer deposition (ALD) technology. The method comprises steps as follows: A) a substrate is arranged in a reaction chamber, a gas-phase Ni source is introduced into the reaction chamber in the form of pulses for deposition under the vacuum condition, and a substrate with the Ni source deposited is obtained, wherein the Ni source contains a compound adopting the structure shown in the formula I; B) a gas phase reducing agent is introduced into the reaction chamber in the form of pulses, the Ni source deposited on the substrate is reduced, and the substrate with the Ni film deposited is obtained. According to the method, the Ni source adopting the structure shown in the formula I is adopted and is applied to the single ALD technology, so that the Ni-containing deposition layer having the relatively good shape-holding property can be deposited and formed on a nanoscale semiconductor device. Besides, the Ni film prepared through the method is lower in resistivity, and experiment results indicate that the resistivity of the Ni film prepared through the method is in a range of 13-24 mu ohm*cm.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and in particular relates to a method for growing a Ni-containing thin film by monoatomic layer deposition technology. Background technique [0002] Ni metal silicide is widely used as a contact material in CMOS (complementary metal oxide semiconductor) device source and drain technology. As a contact metal, Ni-silicide has outstanding advantages such as low resistivity, continuity and uniformity. In traditional Ni silicide, a layer of Ni metal is deposited by PVD (Physical Vapor Deposition, physical vapor deposition) technology, and then Ni and silicon are reacted to form silicide through thermal annealing. [0003] Due to the development of microelectronics and deep submicron chip technology, the size of devices and materials is continuously reduced, and the aspect ratio of devices is continuously increased, so the thickness of the materials used is reduced to the order of se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18C23C16/455H01L21/02
CPCC23C16/18C23C16/45527H01L21/02697C23C16/45553H01L21/28518H01L21/28562C23C16/45525H01L21/28556H01L21/76879
Inventor 丁玉强杜立永张羽翔赵超项金娟
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI