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A method of etching graphene nanopores to reduce the secondary electron emission coefficient

A technology of secondary electron emission and graphene nanopores, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve problems such as poor stability, avoid chemical oxidation, simple technical solutions, and remove surface adsorption Effect

Active Publication Date: 2018-03-09
XIAN INSTITUE OF SPACE RADIO TECH
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Problems solved by technology

[0005] The technical problem solved by the present invention is: to overcome the problems of the insertion loss caused by the suppression of the secondary electron emission coefficient and the poor stability of the secondary electron emission suppression effect, and propose a method of etching graphene nanopores to reduce the secondary electron emission coefficient method, which solves the problem of component insertion loss and suppression effect stability caused by the suppression of secondary electron emission coefficients

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  • A method of etching graphene nanopores to reduce the secondary electron emission coefficient
  • A method of etching graphene nanopores to reduce the secondary electron emission coefficient
  • A method of etching graphene nanopores to reduce the secondary electron emission coefficient

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Embodiment Construction

[0026] The specific idea of ​​the present invention is as follows: a method for etching graphene nanopores to reduce the secondary electron emission coefficient, comprising the steps of ultrasonically cleaning the metal substrate with acetone and alcohol for 20-60 minutes, and blowing dry with nitrogen; Ultrasonic method is used to configure the nitrogen methyl pyrrolidone solution with a concentration of 0.1-1mg / ml graphene; apply 0.05-0.3ml graphene solution on the substrate by spin coating to form a graphene film with nanometer thickness on the surface; 300- At 500°C, the substrate was annealed under the protection of nitrogen for 1 hour to remove residual organic matter on the surface; the substrate was placed in an argon ion etching system, and the graphene was etched for 30s-2 minutes with ions with an energy of 1-5KeV. Graphene nanopores are formed; finally, the samples are removed and preserved. The secondary electron emission suppression effect depends on the thicknes...

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Abstract

Provided is a method for etching graphene nanopores to reduce a secondary electron emission coefficient. The method combines with two different methods to coat a material having a low secondary electron emission coefficient and prepare a trap structure on the surface: the surface is coated with graphene having the low secondary electron emission coefficient, and then nanopores are prepared by adopting an argon ion etching technology. Technically, different secondary electron emission inhibiting effects are achieved by controlling the graphene coating thickness on the surface and the porosity and depth-to-width ratio of the nanopores. It is found through an experimental study that graphene with the thickness ranging from several nanometers to more than ten nanometers deposits on a metal substrate, the secondary electron emission coefficient can be reduced from about 2.0 to 1.5-1.1, and after the graphene nanopores are etched by using argon ions, the secondary electron emission coefficient of the surface is reduced to 0.9, and controllable adjustment from 1.5 to 0.9 of the electron emission coefficient is achieved. The method is simple, convenient and high in stability, and the influence on device surface insertion loss of a conducting coating with nanoscale thickness in a surface loss-less state is smaller. By the adoption of the technical scheme, the secondary electron emission coefficient can be effectively reduced, and the method has a wide application prospect in the fields of particle accelerators, vacuum transmission lines and high-power microwave components.

Description

Technical field: [0001] The patent of the present invention relates to the technical field of secondary electron emission suppression in vacuum electronics, and uses the combination of low secondary electron emission coefficient material graphene and nanopore structure to suppress secondary electron emission. This graphene film with a nanometer thickness and its nanostructure, The conductivity is good, which can effectively reduce the secondary electron emission coefficient of the metal surface, so that the application of this new method can well suppress the micro-discharge effect of components caused by the surface secondary electron emission and the electron cloud phenomenon of the particle accelerator. It specifically relates to the method of preparing ultrasonic dissociated graphene, directly coating nano-scale thickness graphene on the surface of metal silver, copper, and aluminum, and preparing nanopores in graphene by using ion etching technology. This technology can e...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194
CPCC01P2004/04
Inventor 谢贵柏崔万照杨晶李韵胡天存白春江王新波张娜
Owner XIAN INSTITUE OF SPACE RADIO TECH
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