Preparation method and application of zinc nitride film, touch screen cover plate and film
A screen cover film and zinc nitride technology, which is applied in the input/output process of data processing, ion implantation plating, coating, etc., can solve the problems of low production efficiency, high production cost, and inability to achieve perfect fit.
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Embodiment 1
[0071] The preparation method of the zinc nitride thin film of the present embodiment, it comprises the following steps:
[0072] Nitrogen is used as the sputtering gas and reaction gas, and zinc nitride film is formed by reactive sputtering with zinc target;
[0073] Among them, the working pressure of reactive sputtering is 4×10 -3 mbar; in the process of reactive sputtering, the coating power is 10kW; the thickness of zinc nitride film is 10nm; the purity of nitrogen gas is 99.99%, and the volume flow rate of nitrogen gas is 1000sccm; the purity of zinc target is more than 99.99%, and the consumption of zinc target is 1 rotating cathode zinc target; during reactive sputtering, the background vacuum is ≤9×10 -6 mbar, the distance between the zinc target and the substrate is 60mm, and the working temperature is preferably 80°C; in the process of reactive sputtering, the coating method is horizontal travel, and the line speed is 4m / min;
[0074] The present embodiment touch ...
Embodiment 2
[0085] The preparation method of the zinc nitride thin film of the present embodiment, except following conditions, other parameters or conditions are all identical with embodiment 1:
[0086] The working pressure of reactive sputtering is 5×10 -3 mbar; in the process of reactive sputtering, the coating power is 8kW; the thickness of zinc nitride film is 20nm; the volume flow rate of nitrogen gas is 900sccm; the amount of zinc target is 2 rotating cathode zinc targets; The distance between the target and the substrate is 50mm, the working temperature is preferably 50°C, the coating method is horizontal travel, and the line speed is 3m / min;
[0087] The present embodiment touch screen cover plate film, it comprises zinc nitride (Zn 3 N 2 ) film, silicon nitride (Si 3 N 4 ) film and a protective film; wherein, the thickness of the zinc nitride film is 20nm; the thickness of the silicon nitride film is 100nm, and the protective film is a conventional plastic protective film i...
Embodiment 3
[0093] The preparation method of the zinc nitride thin film of the present embodiment, except following conditions, other parameters or conditions are all identical with embodiment 1:
[0094] The working pressure of reactive sputtering is 2×10 -3 mbar; in the process of reactive sputtering, the coating power is 12kW; the thickness of zinc nitride film is 30nm; the volume flow rate of nitrogen gas is 1100sccm; the amount of zinc target is 2 rotating cathode zinc targets; The distance between the target and the substrate is 90mm, the working temperature is preferably 120°C, the coating method is horizontal travel, and the line speed is 2m / min;
[0095] The present embodiment touch screen cover plate film, it comprises zinc nitride (Zn 3 N 2 ) film, silicon nitride (Si 3 N 4 ) film and a protective film; wherein, the thickness of the zinc nitride film is 30nm; the thickness of the silicon nitride film is 150nm, and the protective film is a conventional plastic protective fil...
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Abstract
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