Sapphire processing method

Abstract

The invention discloses a sapphire processing method, for the purpose of providing a processing method which can reduce the processing cost of sapphire and improve the processing efficiency while ensuring and improving the processing quality of a sapphire substrate. The method successively comprises the following steps: A, crystal rod cutting; B, grinding processing; C, cleaning, D, annealing processing; E, cleaning, and F, chemical mechanical polishing processing. A grinding lubricant for the chemical mechanical polishing processing is an aluminum oxide polishing solution.

Description

technical field [0001] The invention relates to the field of sapphire processing, in particular to a sapphire processing method. Background technique [0002] Sapphire has been used in batch processing in the lighting market for 8 years, and the price of sapphire substrate has dropped from $35 / piece in 2008 to $3.5 / piece now. Sapphire substrate manufacturers are under increasing pressure. How to reduce the manufacturing cost and processing time of sapphire substrates while ensuring and improving the quality of sapphire substrates is crucial to the survival of enterprises. [0003] The current sapphire substrate processing process is as follows: Ingot Inspection → Cutting → Cleaning → Bevelling → Grinding → Cleaning → Annealing → Cleaning → Waxing → Copper Polishing → Cleaning → Chemical Mechanical Polishing (CMP) → Cleaning , among which grinding treatment, annealing treatment and chemical mechanical polishing treatment are three important links in the manufacture of sapphi...

AI Technical Summary

Problems solved by technology

[0004] In the traditional sapphire substrate processing technology, chemical mechanical polishing uses diamond liquid or silicon dioxide polishing liquid as the abrasive liquid, and waxing and copper polishing are required before chemical mechanical polishing, so that the sapphire substrate can be achieved. It is processed to the standard TTV≤3um, and the surface roughness is as small as Ra<0.3nm; therefore, the current sapphire substrate processing technology needs to use a variety of consumables (wax, diamond liquid, silicon dioxide polishing liquid) and waxing machines, grinding Machine, CMP polishing machine and other equipment cooperate to complete the processing, and the processing flow time is usually 5-6 hours, which not only increases the manufacturing cost of sapphire substrate, but also greatly affects the processing efficiency of sapphire substrate