Floating Evaporation Assembly of Aligned Carbon Nanotubes
A technology of single-walled carbon nanotubes and orientation, applied in the field of densityalign
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Embodiment 1
[0067] In this example, a dose-controlled floating evaporation self-assembly process was used to control the arrangement of bands and the number of s-SWCNTs, including s-SWCNTs with excellent electronic purity levels (99.9% s-SWCNTs) deposited at a high deposition rate. Parallel ribbon arrays of oriented s-SWCNTs.
[0068] The s-SWCNT ribbon formation is separated by evaporation from the bulk solution and by repeated application of s-SWCNT at a controlled dose, the dose-controlled floating evaporation self-assembly process forms ribbons in which the s-SWCNT is within ±14° Orientation, with ~50 s-SWCNTμm -1 density packing, and mainly constitute a fairly ordered monodisperse layer. A FET device incorporating this ribbon was shown to have a 38 cm channel length at 9 μm 2 v -1 the s -1 mobility and 2.2×10 6 High performance of on / off ratio.
[0069] Results and discussion
[0070] Two different types of s-SWCNT inks were investigated. The first type of ink was processed b...
Embodiment 2
[0093] This example illustrates the performance of superior electron-type sorting, aligned s-SWCNTs in field-effect transistors, achieving both high on-conductance and high on- / Turn conductance modulation off. Using polyfluorene derivatives as semiconductor selective agents, s-SWCNTs were isolated from a heterogeneous mixture of s-SWCNTs and m-SWCNTs, and oriented by dose-controlled floating evaporation self-assembly on substrates.
[0094] Example 1 demonstrates that poly[(9,9-dioctylfluorene-2,7-diyl)-alternating-co-( Orientation of s-SWCNTs separated from polydisperse mixtures of SWCNTs using 6,6'-{2,2'-bipyridine})](PFO-BPy) as a sorting agent. This example evaluates the performance of these oriented s-SWCNTs as channel materials in FETs and reports extremely high on / off conductance modulation and on conductance over a wide range of channel lengths compared to previously reported studies.
[0095] High purity s-SWCNTs were extracted from as-prepared arc discharge synthe...
Embodiment 3
[0109] In this example, films comprising oriented s-SWCNTs with an excellent level of electron type purity (99.9% s-SWCNTs) were deposited at high deposition rates using a continuous floating evaporation self-assembly process. The SWCNT is fabricated by arc discharge technique, and the SWCNT has a range from about 13 to about diameter in the range.
[0110] Substrate preparation: Rectangular pieces of silicon (approximately 1 cm wide by 3 cm long) were cut from larger silicon wafers. These silicon wafers are used as substrates to be coated. by H 2 o 2 (33%) / Concentrated H 2 SO 4 (67%) Piranha solution to clean the substrate for about 20 min and rinse with deionized (DI) water. After the Piranha treatment, the substrate was covered by a self-assembled monolayer of hexamethyldisilazane (vapor deposition).
[0111] s-SWCNT ink preparation: In toluene (30ml), arc-discharged SWCNT powder ((2mg ml -1 ) and poly[(9,9-dioctylfluorene-2,7-diyl)-alternate-co-(6,6'-{2,2'-bipyrid...
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