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A kind of silicon carbide-based composite phase ceramic material and preparation method thereof

A complex-phase ceramic, silicon carbide-based technology, applied in the field of SiC ceramics, can solve problems such as nonlinear volt-ampere characteristics, and achieve the effects of good thermal conductivity and electrical conductivity, high strength and hardness, and low density

Active Publication Date: 2018-12-07
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Silicon carbide (SiC) ceramics have excellent properties such as high strength, high hardness, high thermal conductivity, high temperature resistance, corrosion resistance, wear resistance, stable performance, and not easy to age. They have been widely used in industrial fields, but SiC ceramics as a A semiconductor material whose volt-ampere characteristics are nonlinear, and is usually only used as a varistor ceramic in the field of electronic communication

Method used

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  • A kind of silicon carbide-based composite phase ceramic material and preparation method thereof
  • A kind of silicon carbide-based composite phase ceramic material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] SiC, ZrB 2 (20wt%) 100g in total, sintering aid B 4 C 0.6g, phenolic resin 10g, the powder was made into a slurry with a solid content of 45wt%, and 200g of SiC balls were used as the ball milling medium, and mixed for 24h. Then dry and sieve, the obtained powder is molded on a flatbed machine under 15MPa pressure, and then isostatically pressed under 200MPa pressure. After debonding, it was sintered under normal pressure Ar atmosphere, the sintering temperature was 2100°C, and the holding time was 1h. The obtained SiC-based composite ceramics had a density of 3.48g cm -3 , Bending strength 313MPa. The obtained ceramics were made into small discs of Φ12mm and thickness 2mm, coated with silver paste electrodes on both ends, and then kept in a muffle furnace at 750°C for 10min. The obtained electronic components were tested by Keithley 2450 multi-channel System test, its resistivity ρ is 220.13Ω·cm.

Embodiment 2

[0036] SiC, ZrB 2 (24wt%) 100g in total, sintering aid B 4 C 0.6g, binder phenolic resin 8g, the powder was made into a slurry with a solid content of 45wt%, and 200g of SiC balls were used as a ball milling medium, and mixed for 24 hours. Then dry and sieve, the obtained powder is molded on a flatbed machine under 15MPa pressure, and then isostatically pressed under 200MPa pressure. After debonding, it was sintered under normal pressure Ar atmosphere, the sintering temperature was 1900°C, and the holding time was 2h. The obtained SiC-based composite ceramic material had a density of 3.55g cm -3 , The bending strength is 310MPa. The obtained ceramics were made into small discs of Φ12mm and thickness 2mm, coated with silver paste electrodes on both ends, and then kept in a muffle furnace at 750°C for 10min. The obtained electronic components were tested by Keithley 2450 multi-channel System test, its resistivity ρ is 15.37Ω·cm.

Embodiment 3

[0038] SiC, ZrB 2 (28wt%) 100g in total, sintering aid B 4 C 0.6g, binder phenolic resin 5g, the powder was formulated into a slurry with a solid content of 45wt%, and 200g of SiC balls were used as a ball milling medium, and mixed for 24 hours. Then dry and sieve, the obtained powder is molded on a flatbed machine under 15MPa pressure, and then isostatically pressed under 200MPa pressure. After debonding, it was sintered in Ar atmosphere at normal pressure, the sintering temperature was 2200 ° C, and the holding time was 1 h. The obtained SiC-based composite ceramic material had a density of 3.64 g cm -3 , The flexural strength is 316MPa. The obtained ceramics were made into small discs of Φ12mm and thickness 2mm, coated with silver paste electrodes on both ends, and then kept in a muffle furnace at 750°C for 10min. The obtained electronic components were tested by Keithley 2450 multi-channel System test, its resistivity ρ is 6.89Ω·cm.

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Abstract

The invention relates to a silicon carbide-based composite ceramic material and a preparation method thereof. The silicon carbide-based composite ceramic material comprises a silicon carbide matrix material and a ZrB2 second phase material, and the content of the ZrB2 second phase material is not lower than 20 wt%, and preferably 20-40 wt%. Silicon carbide-based composite ceramic produced by using the silicon carbide-based composite ceramic material has linear volt-ampere characteristic, adjustable resistivity, high strength and hardness, and low density, and is hopeful to be greatly applied to the fields of structure and function integrated resistor elements. The SiC / ZrB2 composite ceramic is hopeful to become a structure and function integrated electronic industrial element running in ultrahigh temperature, strong acid, strong alkali and other strict environments. The method is normal pressure sintering, ad allows structured ceramic with different shapes and dimensions to be produced.

Description

technical field [0001] The invention relates to a method for preparing a silicon carbide (SiC)-based composite phase ceramic material, belonging to the field of SiC ceramics. Background technique [0002] Silicon carbide (SiC) ceramics have excellent properties such as high strength, high hardness, high thermal conductivity, high temperature resistance, corrosion resistance, wear resistance, stable performance, and not easy to age. They have been widely used in industrial fields, but SiC ceramics as a A semiconductor material whose volt-ampere characteristics are non-linear, and is usually only used as a varistor ceramic in the field of electronic communication. [0003] Some components in the electronics industry are required to be able to conduct static electricity and have wear-resistant properties. Previously, alumina materials coated with a conductive layer were often used, and their lifespan is short. If they are replaced by SiC-based multiphase ceramics with linear re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B41/88
CPCC04B35/565C04B41/009C04B41/5116C04B41/88C04B2235/3813C04B2235/3821C04B2235/77C04B2235/96
Inventor 陈健陈军军黄政仁陈忠明刘学建
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI