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A white light pyramid array gallium nitride-based semiconductor light-emitting diode without phosphor and its preparation method

A light-emitting diode, no phosphor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low color rendering index, difficult to achieve warm white light, long-wave light intensity, etc., and achieve the effect of simple process

Active Publication Date: 2019-02-05
XI AN JIAOTONG UNIV
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Problems solved by technology

Although this method can achieve a reasonable wavelength distribution, due to the limitation of the size of the [0001] plane in the pyramid growth, the corresponding long-wave light intensity is weak, it is difficult to achieve warm white light, and the corresponding color rendering index is also low

Method used

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  • A white light pyramid array gallium nitride-based semiconductor light-emitting diode without phosphor and its preparation method
  • A white light pyramid array gallium nitride-based semiconductor light-emitting diode without phosphor and its preparation method
  • A white light pyramid array gallium nitride-based semiconductor light-emitting diode without phosphor and its preparation method

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Embodiment Construction

[0036] The present invention will be further described in detail below in conjunction with specific embodiments, which are to explain rather than limit the present invention.

[0037] see figure 1 , the preparation method of the white light pyramid array gallium nitride-based flexible semiconductor light-emitting diode without fluorescent powder disclosed in the present invention comprises the following steps:

[0038] Step 1: obtain a patterned sapphire substrate by laser drilling, which is used to grow a pyramid array; wherein, the shape of the pyramid is changed by adjusting the relationship between the aperture size and the thickness of the epitaxial layer;

[0039] Step 2: growing a pyramid array on the patterned substrate;

[0040] Step 3: Fill the gaps between the pyramids with insulating material, etch and expose the top of the pyramids;

[0041] Step 4: Fabrication of p-plane transparent conductive electrodes;

[0042] Step 5: Substrate transfer and laser lift-off;...

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Abstract

The invention discloses a fluorescent powder-free white light pyramid array nitride-based semiconductor LED and a preparation method thereof and belongs to the technical field of semiconductors. The method includes three steps, namely laser punching size selecting, pyramid growing, and device manufacturing. According to the invention, the regulating and controlling of area ratio between the surface of the pyramid surface and the pyramid surface is used to regulate and control light intensity ratio between a low wavelength and a long wavelength; the shortening of punching spacing is intended for realizing the connection of two pyramids so as to further regulate and control corresponding wavelength of the pyramid top. The multi-wavelength structure provides the possibility of enabling the white light LED to have high color rendering index. According to the invention, the method has simple technology, and can regulate and control wavelengths simply by changing punching sizes and punching spacing. In addition, according to the invention, the method adopts a split pyramid structure and can be intended for realizing bendable flexible white light LED.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a white light pyramid array gallium nitride-based semiconductor light-emitting diode without phosphors and a preparation method thereof. Background technique [0002] Gallium nitride-based LEDs show great application potential in white light illumination. However, the current way to realize white light LEDs is to coat blue chips with yellow phosphors. White LEDs in this way have many disadvantages, especially in terms of efficiency. Therefore, white LEDs without phosphor coating have become a current research hotspot. However, in order to achieve green light or longer wavelengths, the indium composition required for quantum wells is as high as 20% or more. With the increase of the indium composition, the lattice mismatch between GaN and InGaN intensifies, which leads to the aggregation of the indium composition and the quantum confined Stokes shift (QCSE) eff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/24H01L33/32
CPCH01L33/007H01L33/06H01L33/24H01L33/32
Inventor 云峰田振寰李虞锋
Owner XI AN JIAOTONG UNIV
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