A kind of three-dimensional structure gain compensation type saw device and its preparation method

A technology of gain compensation and three-dimensional structure, applied in the direction of electrical components, impedance networks, etc., can solve the problems of heavy consistency and large time-line insertion loss

Active Publication Date: 2020-10-27
GUIZHOU MINZU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The disadvantages of large insertion loss of the time line, in order to solve the traditional use of external circuit compensation of the device

Method used

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  • A kind of three-dimensional structure gain compensation type saw device and its preparation method
  • A kind of three-dimensional structure gain compensation type saw device and its preparation method
  • A kind of three-dimensional structure gain compensation type saw device and its preparation method

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preparation example Construction

[0031] A method for preparing a three-dimensional structure gain-compensated SAW device, comprising:

[0032] Step 1. Fabricate LNA on silicon substrate by IC process;

[0033] Step 2, making a piezoelectric film on the surface of the silicon substrate with the LNA;

[0034] Step 3, preparing a layer of metal aluminum film or copper film by evaporation or sputtering on the surface of the substrate with LNA and piezoelectric film;

[0035] Step 4. Etching the mask pattern of the interdigital transducer (IDT) on the surface of the metal aluminum film or copper film by photolithography;

[0036] Step 5, encapsulating, encapsulating it in an insulating casing.

Embodiment 1

[0038] Taking the ladder-shaped IDT structure as an example, implement a three-dimensional structure gain compensation SAW device: the ladder-shaped IDT structure is as follows figure 2 The mark 2 in the figure represents the input IDT; the mark 3 in the figure represents the output IDT; the mark 4 in the figure represents the bus bar and reflection grid; the mark 5 in the figure represents the dotted line The structure diagram shows the core of the surface acoustic wave filter manufactured by etching the stepped IDT structure on the surface of the piezoelectric film. The width of the interdigitated electrodes is a, and the electrode interval is b. The amplitude-frequency characteristics of the surface acoustic wave filter or surface acoustic wave resonator designed when a=b=7.5 micron, interdigital logarithm N=30 are as follows image 3 shown. The substrate material is AlN piezoelectric thin film with C-axis preferential orientation (100). The fabricated samples were teste...

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PUM

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Abstract

The invention discloses a stereoscopic structured gain compensation type SAW device and a preparation method. The stereoscopic structured gain compensation type SAW device comprises an input interdigital transducer and an output interdigital transducer, and is characterized in that both the input interdigital transducer and the output interdigital transducer are attached onto the surface of a piezoelectric material; the input interdigital transducer and the output interdigital transducer are in coupled connection through SAW; the output interdigital transducer and a matched compensation amplifying circuit are in conductor line connection; the disadvantage that the insertion loss of a SAW filter or a SAW resonator or a SAW delay line is high in prior art can be solved; and thus, the problems of poor consistency, repeatability and reliability, difficult debugging and the like due to external circuit compensation of devices traditionally can be solved.

Description

technical field [0001] The invention belongs to the technical field of surface acoustic wave devices, in particular to a three-dimensional structure gain compensation type SAW device and a preparation method. Background technique [0002] The basic structure of the surface acoustic wave (Surface Acoustic Wave, SAW) device is to make two acoustic-electric and electro-acoustic transducers on the polished surface of a piezoelectric film or a substrate material with piezoelectric properties, using semiconductor integrated circuits Planar process, vapor-depositing a certain thickness of metal film on the surface of piezoelectric film or piezoelectric substrate, and etching the mask patterns of two designed interdigital transducers (Inter Digital Transducer, IDT) by photolithography On the surface of the substrate, they are used as input transducers and output transducers, respectively. The basic working principle is: the input transducer uses the inverse piezoelectric effect of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H9/10
CPCH03H9/02661H03H9/02818H03H9/1064
Inventor 王代强童红杨吟野任达森文理为邓开乐叶浩姚祖铭易利亚
Owner GUIZHOU MINZU UNIV
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