One-step chemical grafting of organic insulating films in through-silicon vias
A technology of organic insulating film and chemical grafting, applied in the field of semiconductor chip packaging, can solve problems such as being difficult to realize, and achieve the effect of low cost
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Embodiment 1
[0026] This example involves a method of chemically grafting an organic insulating film in a through-silicon via in one step, and the specific steps are as follows:
[0027] Step (1) Ultrasonic cleaning of p-type thin slices with TSVs having a resistivity of 50 Ω / m, a pore diameter of 100 μm, and a pore depth of 200 μm in acetone, alcohol, and deionized water for 10 minutes;
[0028] Step (2) configuration electrolytic solution, wherein has the sodium dodecylsulfonate of 5g / L, the hydrochloric acid of 0.5mol / L, the acrylic acid of 0.5mol / L, the pyrazole diazonium inner salt of 1g / L, 1mol / L of sodium fluoride. The pH value of the electrolyte solution is 1.
[0029] Step (3) Place the silicon wafer in step (1) in the electrolyte solution in step (2) for 5h, the temperature is controlled at 25°C, no need to add any instrument, measure its cross section as figure 1 As shown, an organic insulating film 1 is grafted on the TSV 2 . in F - Under the action of ions, an organic film...
Embodiment 2
[0031] This example involves a method of chemically grafting an organic insulating film in a through-silicon via in one step, and the specific steps are as follows:
[0032] Step (1) Ultrasonic cleaning of p-type thin slices with TSVs having a resistivity of 500Ω / m, a pore diameter of 200 μm, and a pore depth of 300 μm in acetone, alcohol, and deionized water for 10 minutes;
[0033] Step (2) configures the electrolyte solution, wherein there are 10g / L sodium dodecylsulfonate, 0.55mol / L hydrochloric acid, 1mol / L trifluoroethyl methacrylate, 2g / L pyrazole diazo Salt, 2mol / L hydrofluoric acid. The pH value of the electrolyte solution is 2.
[0034] Step (3) Place the silicon wafer in step (1) in the electrolyte solution in step (2) for 4 hours, the temperature is controlled at 23°C, no need to add any instrument, measure its cross section as figure 1 shown. in F - Under the action of ions, an organic film with a 400nm inner wall and a 600nm bottom is obtained, with a breakdo...
Embodiment 3
[0036] This example involves a method for chemically grafting an organic insulating film in a through-silicon via in one step, and the specific steps are as follows:
[0037] Step (1) n-type, the uniform doping concentration of impurities is 200 / cm 3 , the resistivity is 5Ω / m, the pore diameter is 300μm, and the hole depth is 200μm. The thin silicon wafer with silicon vias is cleaned in acetone, alcohol, and deionized water for 10 minutes;
[0038] Step (2) configures electrolytic solution, wherein has the sulfated castor oil of 20g / L, the hydrochloric acid of 0.6mol / L, the trifluoroethyl methacrylate of 0.5mol / L, the triptycene diazonium salt of 5g / L, 3mol / L sodium fluoride. The pH value of the electrolyte solution is 3.
[0039] Step (3) Place the silicon wafer in step (1) in the electrolyte solution in step (2) for 3h, the temperature is controlled at 20°C, no need to add any instrument, measure its cross section as figure 1 shown. in F - Under the action of ions, an o...
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