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Surface-plasmon enhanced InGaN/GaN polarized extraction LED and preparation method thereof

A surface plasmon and polarization technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as unseen physical results and single function, and achieve the effect of improving internal quantum efficiency and enhancing luminous efficiency.

Active Publication Date: 2016-11-16
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Before the present invention, the Chinese invention patent (CN 103746057A) "A linearly polarized light-emitting diode" announced that a dielectric transition layer was introduced into the p-type layer and the double-layer metal Al nano-grating. The dielectric layer included MgF, etc., but it could only make the LED Compared with the present invention, the polarization degree of light output is single, and there is no detailed description of the manufacturing process in the invention, and no real results; however, the present invention arranges composite gratings on the LED, including p-type GaN gratings and double-layer metal gratings, It not only generates surface plasmons to improve the internal quantum efficiency of LEDs, but also obtains the degree of polarization of light output

Method used

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  • Surface-plasmon enhanced InGaN/GaN polarized extraction LED and preparation method thereof

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Embodiment 1

[0042] The preparation method of the surface plasmon-enhanced InGaN / GaN polarized light emitting LED, the steps comprising:

[0043] (1) On the base layer 1, grow n-type GaN layer 2, In x Ga 1-x The N / GaN multi-quantum well active layer 3 and the p-type GaN layer 4 are made into an InGaN / GaN multi-quantum well LED substrate, where x is 0.3, the luminous wavelength is 524nm, the period number of the quantum well is 9, and the InGaN well layer The thickness of the GaN barrier layer is 3nm, the thickness of the GaN barrier layer is 12nm, the thickness of the n-type GaN layer is 3μm, and the thickness of the p-type GaN layer is 420nm;

[0044] (2) Growing a layer of SiO with a thickness of 200nm on the InGaN / GaN multi-quantum well LED substrate 2 Dielectric film layer 5,

[0045] (3) on SiO 2 The surface of the dielectric film layer is spin-coated with PMMA with a thickness of 200nm to form a PMMA layer 6;

[0046] (4) spin-coat the UV-curable glue of 150nm thickness on the P...

Embodiment 2

[0056] The surface plasmon-enhanced InGaN / GaN polarized light-emitting LED has a structure from bottom to top: base layer, n-type GaN layer, In x Ga 1-x N / GaN multi-quantum well active layer, p-type GaN layer, the p-type GaN layer is etched into a grating structure, and becomes a p-type GaN grating layer, and a nanometer double-layer aluminum metal grating layer is arranged on the p-type GaN grating layer , the In x Ga 1-x The number of periods of the N / GaN multi-quantum well active layer is 5, the x range: x=0.23, the light emission wavelength is 495nm, the thickness of the n-type GaN layer is 4 μm, the period of the p-type GaN grating layer is 450nm, and the duty cycle is 0.36, the height is 100nm, the lower metal grating and In x Ga 1-x The distance between the N / GaN multi-quantum well active layers is 10nm, and the layer height of the nanometer double-layer metal grating is 10nm.

Embodiment 3

[0058] The surface plasmon-enhanced InGaN / GaN polarized light-emitting LED has a structure from bottom to top: base layer, n-type GaN layer, In x Ga 1-x N / GaN multi-quantum well active layer, p-type GaN layer, the p-type GaN layer is etched into a grating structure, and becomes a p-type GaN grating layer, and a nanometer double-layer aluminum metal grating layer is arranged on the p-type GaN grating layer , the In x Ga 1-x The period number of the N / GaN multi-quantum well active layer is 15, the x range: x=0.33, the luminous wavelength is 575nm, the thickness of the n-type GaN layer is 5 μm, the period of the p-type GaN grating layer is 480nm, and the duty cycle The ratio is 0.42, the height is 400nm, the lower metal grating and In x Ga 1-x The distance between the N / GaN multi-quantum well active layers is 50nm, and the layer height of the nanometer double-layer metal grating is 50nm.

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Abstract

The invention discloses a surface-plasmon enhanced InGaN / GaN polarized extraction LED comprising a substrate layer, an n type GaN layer, a InxGa(1-x)N / GaN multi-quantum-well active layer, and a p type GaN layer from bottom to top successively. The LED is characterized in that the p type GaN layer is etched to form a grating structure and a p type GaN grating layer; and a nano double-layer metal grating layer is arranged on the p type GaN grating layer. In addition, the invention also discloses a preparation method for the LED. According to the invention, the composite grating unit including the p type GaN grating and the double-layer metal grating is arranged on the LED and the surface plasmon resonance effect is generated between the p type GaN grating and the double-layer metal grating, so that the composite process is accelerated directly and the internal quantum efficiency of the LED is improved and thus the light-emitting active layer emits strong polarized light directly. Compared with the traditional sub-wavelength metal grating only realizing polarization, the composite grating unit enables the light emitting efficiency enhancement and polarized light emitting of the LED to be realized simultaneously and independence to a material growing process is realized.

Description

technical field [0001] The patent of the present invention relates to semiconductor light-emitting diodes, in particular to a surface plasmon-enhanced InGaN / GaN polarized light-emitting LED and a preparation method thereof. Background technique [0002] In recent years, Group III nitride light-emitting diodes (LEDs) have received widespread attention and achieved great success. They are widely used in backlighting, lighting, medical treatment, and traffic signals due to their advantages of high luminous efficiency, long life, and energy saving and environmental protection. and other fields. In recent years, thanks to the progress of nitride material growth technology, gallium nitride (GaN)-based blue-green LEDs have made great progress in optoelectronic properties such as luminous efficiency. However, there is a strong quantum confinement Stark effect in the quantum well, which reduces the internal quantum efficiency of the LED, and this effect is particularly obvious in li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/38H01L33/00H01L33/32
CPCH01L33/0075H01L33/06H01L33/32H01L33/38
Inventor 张荣张国刚刘斌任芳芳谢自力陈鹏郭旭葛海雄修向前赵红陈敦军陆海韩平施毅郑有炓
Owner NANJING UNIV