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Mems infrared light source based on wet pre-release structure and preparation method thereof

A technology of infrared light source and wet method, applied in the field of infrared light source, can solve the problems of incomplete release, reduction of heat radiation efficiency, loss of heat energy, etc., and achieve the effect of easy operation, process compatibility, and increased stability

Active Publication Date: 2018-06-22
SOI MICRO CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After the etching is completed, the release is prone to incomplete, and a part of the silicon base is still connected to the structure, resulting in a large part of the heat energy loss from the substrate, which greatly reduces the thermal radiation efficiency.

Method used

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  • Mems infrared light source based on wet pre-release structure and preparation method thereof
  • Mems infrared light source based on wet pre-release structure and preparation method thereof
  • Mems infrared light source based on wet pre-release structure and preparation method thereof

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Embodiment Construction

[0046]The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0047] An embodiment of the present invention provides a MEMS infrared light source based on a wet pre-release structure, such as Figure 9 As shown, the MEMS infrared light source based on the wet pre-release structure includes from bottom to top: a carrier substrate 1, a silicon oxide support layer 2, a silicon nitride support layer 3, an isolation layer 7, a metal electrode 8 and a radiation layer 9; the carrier substrate 1 has a cavity 104 .

[0048] Where...

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Abstract

The invention discloses an MEMS infrared light source based on a wet process pre-release structure and a preparation method thereof. The MEMS infrared light source based on the wet process pre-release structure comprises a bearing substrate having an embedded hollow cavity and an infrared light source structure on the bearing substrate; the infrared light source structure is provided with a supporting layer, an isolation layer and a graphical metal electrode and a radiation layer; the graphical metal electrode is deposited on the isolation layer, the radiation layer is prepared on an upper surface of the graphical metal electrode, and the radiation layer, the graphical metal electrode and the supporting layer are all deposited on the substrate having the embedded hollow cavity. The MEMS infrared light sourced disclosed by the invention can improve the radiation efficiency of the light source, has simple operation, lower power consumption and cost and high stability, and is compatible with the CMOS process.

Description

technical field [0001] The invention relates to the technical field of infrared light sources, in particular to a MEMS infrared light source based on a wet pre-release structure and a preparation method thereof. Background technique [0002] With the continuous progress of infrared technology research, infrared technology is widely used in temperature control, environmental monitoring, space surveillance, high-resolution imaging, gas detection and other fields. At present, in the gas detection system based on infrared absorption spectroscopy technology, the performance of infrared light source directly determines the accuracy and sensitivity of gas detection. At present, commercially available infrared light sources mainly include: quantum cascade infrared lasers, infrared light-emitting diodes and thermal radiation infrared light sources. Among them, the optical power output by infrared light-emitting diodes in the infrared mid-to-long range is very low, which limits its s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C1/00
CPCB81B7/0009B81C1/00047
Inventor 明安杰刘卫兵孙西龙王玮冰陈大鹏
Owner SOI MICRO CO LTD
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