Preparation method for forming metal silicide on gate of semiconductor device

Abstract

The invention provides a preparation method for forming a metal silicide on the gate of a semiconductor device. The method comprises: sequentially forming a gate oxide layer and a low-resistance polysilicon layer on the surface of a semiconductor silicon substrate; Deposit silicon nitride on the surface to form a silicon nitride layer; form a gate after photolithography and etching, and then form a body region, source region and drain region; form an oxide layer on the surface of the entire device; remove the surface of the silicon nitride layer The oxide layer is removed to remove the silicon nitride layer; after the metal layer is covered on the entire device surface, the metal layer on the surface of the low-resistance polysilicon layer reacts to form a metal silicide, and then the unreacted metal layer is removed. The problem of preventing the electric leakage of the semiconductor device is realized, and the reliability of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a preparation method for forming a metal silicide on a gate of a semiconductor device. Background technique [0002] Semiconductor devices are commonly used devices in industrial manufacturing, and metal silicide needs to be formed on the gate of the semiconductor device to reduce the resistance of the gate. [0003] The preparation method for forming a metal silicide on the gate of a semiconductor device provided in the prior art is: depositing silicon nitride on a polysilicon layer on a semiconductor silicon substrate to form a silicon nitride layer; Implant N-type ions into the polysilicon layer in the direction to make the polysilicon layer a low-resistance polysilicon layer; then perform photolithography, etching, and thermal oxidation treatments on the silicon substrate to form an oxide layer on the surface of the silicon substrate; then use acidic The solution remo...

AI Technical Summary

Problems solved by technology

[0005] The invention provides a preparation method for forming a metal silicide on the gate of a semiconductor device, which is used to solve the problem of semiconductor device leakage caused by the existing preparation method, thereby damaging the semiconductor device and reducing the reliability of the semiconductor device

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