Multilayer graphene quantum carbon-based semiconductor material prepared from PI film, and preparation method for multilayer graphene quantum carbon-based semiconductor material

Abstract

The invention provides a multilayer graphene quantum carbon-based semiconductor material prepared from a PI film, and a preparation method for the multilayer graphene quantum carbon-based semiconductor material. The preparation method comprises the steps of S1, taking the PI film as a raw material, performing polymer sintering at a first temperature, and removing H, O and N atoms to form a carbon precursor; and S2, adjusting the first temperature to a second temperature, and performing graphitization on the carbon precursor to form the multilayer graphene quantum carbon-based two-dimensional semiconductor material, wherein at least in the step S2, nano metal material doping is carried out to form quantum dots in multilayer graphene. The multilayer graphene quantum carbon-based two-dimensional semiconductor material prepared by the method adopts a hexagonal planar net molecular structure, is orderly arranged, and has flexibility, high tortuosity ratio, and quite low in-plane dispersity and degree of deviation; band gaps are formed through nano metal doping, and are controllable; and in addition, by adoption of the preparation method, the large-area, low-cost, large-batch and roll-to-roll continuous production can be realized.

Description

technical field [0001] The invention relates to the field of graphene semiconductor materials, in particular to a method for preparing a multilayer graphene quantum carbon-based two-dimensional semiconductor material. Background technique [0002] Two-dimensional nanocarbon materials, especially graphene quantum carbon-based semiconductor materials, have attracted more and more attention. They have extremely excellent electrical, optical, magnetic, thermal and mechanical properties, and are ideal nanoelectronic and optoelectronic materials. The graphene quantum carbon-based semiconductor material has a special geometric structure, so that the electronic state near the fermion surface is mainly an extended π state. Due to the lack of surface dangling bonds and the defects of the surface nano-carbon structure, the scattering of the extended π state hardly affects electrons. Transport in the material, the mobility of electrons and holes in multilayer graphene at room temperatur...

AI Technical Summary

Problems solved by technology

However, since the band gap of graphene is zero, it means that logic circuits cannot be made, which has become the main difficulty and challenge for graphene to be used in transistors and other devices.

The preparation of graphene from natural graphite ore adopts epitaxial growth method, graphite oxide reduction method, CVD method stripping and embedding expansion method, and organic synthesis method. According to literature reports, the above method can open a band gap of only 0.03eV, and the area is less than 1 inch cannot be industrialized at all