Multilayer graphene quantum carbon-based semiconductor material prepared from PI film, and preparation method for multilayer graphene quantum carbon-based semiconductor material

A kind of ene quantum and two-dimensional semiconductor technology, applied in the field of graphene semiconductor materials, can solve the problems of inability to carry out industrialization process and inability to make logic circuits, and achieve low cost, large area, in-plane dispersion and small deviation.

Active Publication Date: 2016-12-07
SHENZHEN DANBOND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the band gap of graphene is zero, it means that logic circuits cannot be made, which has become the main difficulty and challenge for graphene to be used in transistors and other devices.
The preparation of graphene from natural graphite ore adopts epitaxial grow

Method used

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Examples

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Comparison scheme
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preparation example Construction

[0016] In one embodiment, a method for preparing a multilayer graphene quantum carbon-based two-dimensional semiconductor material includes the following steps: S1. Using the PI film as a raw material, carry out polymer sintering at the first temperature to remove H, O, N atoms form a microcrystalline carbon precursor; S2. Adjust to the second temperature, and the carbon precursor is graphitized to form a multilayer graphene quantum carbon-based two-dimensional semiconductor material; wherein, at least In the step S2, nano-metal material is doped to form quantum dots in the multi-layer graphene.

[0017] In a preferred embodiment, the PI film is a novel transparent polyimide film prepared in the prior art CN103289402A. The PI film is obtained by hybridizing aromatic diamines and aromatic polyanhydrides, introducing methyl groups to obtain polyimide, and then performing cyclodehydration, polycondensation, and imidization. The film has excellent orientation and high birefringen...

Embodiment 1

[0029] In an inert gas, the PI film is sintered and carbonized by polymer, and H, O, and N atoms are removed at 1000°C, 2000°C, and 3000°C respectively, and the C atoms are rearranged to form a carbon precursor; the carbon precursor is inert. Under the protection of gas, graphitization is carried out at 2800°C, and the hexagonal mesh structure begins to form a high-purity single-crystal graphene structure. The two-dimensional carbon layer is hexagonal close-packed, and has an orderly arrangement of planar network molecules. In the process of carbonization and graphitization, doping InAs nano-metal materials to form quantum dots, making multi-layer graphene quantum carbon-based two-dimensional semiconductor materials, the density of quantum dots is 1×10 10 ~3×10 10 cm -2 , the bandgap width is 1.3-1.4ev.

Embodiment 2

[0031] The difference from Example 1 is that the doped nano-metal material is a mixture of InAs and Sb, and the quantum dot density formed is 1.2×10 12 cm -2 . Through the quantum tunneling effect, control the addition of Sb elements in InAs to form InSb x As 1-x For quantum dots, when the content x is adjusted, the bandgap width can be adjusted.

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Abstract

The invention provides a multilayer graphene quantum carbon-based semiconductor material prepared from a PI film, and a preparation method for the multilayer graphene quantum carbon-based semiconductor material. The preparation method comprises the steps of S1, taking the PI film as a raw material, performing polymer sintering at a first temperature, and removing H, O and N atoms to form a carbon precursor; and S2, adjusting the first temperature to a second temperature, and performing graphitization on the carbon precursor to form the multilayer graphene quantum carbon-based two-dimensional semiconductor material, wherein at least in the step S2, nano metal material doping is carried out to form quantum dots in multilayer graphene. The multilayer graphene quantum carbon-based two-dimensional semiconductor material prepared by the method adopts a hexagonal planar net molecular structure, is orderly arranged, and has flexibility, high tortuosity ratio, and quite low in-plane dispersity and degree of deviation; band gaps are formed through nano metal doping, and are controllable; and in addition, by adoption of the preparation method, the large-area, low-cost, large-batch and roll-to-roll continuous production can be realized.

Description

technical field [0001] The invention relates to the field of graphene semiconductor materials, in particular to a method for preparing a multilayer graphene quantum carbon-based two-dimensional semiconductor material. Background technique [0002] Two-dimensional nanocarbon materials, especially graphene quantum carbon-based semiconductor materials, have attracted more and more attention. They have extremely excellent electrical, optical, magnetic, thermal and mechanical properties, and are ideal nanoelectronic and optoelectronic materials. The graphene quantum carbon-based semiconductor material has a special geometric structure, so that the electronic state near the fermion surface is mainly an extended π state. Due to the lack of surface dangling bonds and the defects of the surface nano-carbon structure, the scattering of the extended π state hardly affects electrons. Transport in the material, the mobility of electrons and holes in multilayer graphene at room temperatur...

Claims

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Application Information

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IPC IPC(8): H01L29/12H01L29/16H01L29/167H01L21/324
CPCH01L21/324H01L29/127H01L29/1606H01L29/167
Inventor 刘萍
Owner SHENZHEN DANBOND TECH
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