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III-nitride semiconductor light emitting device graphical substrate and preparation method

A technology of nitride semiconductors and patterned substrates, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing the density of convex patterns A, such as the limit, and achieve the effect of increasing density

Inactive Publication Date: 2016-12-14
东晶电子金华有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the increase of external quantum efficiency is achieved by increasing the area and density of the inclined surface formed by the convex pattern A on the substrate surface, but because the photolithography process has a resolution limit, the density of the convex pattern A is increased. There is a limit

Method used

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  • III-nitride semiconductor light emitting device graphical substrate and preparation method
  • III-nitride semiconductor light emitting device graphical substrate and preparation method
  • III-nitride semiconductor light emitting device graphical substrate and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Such as Figure 4 As shown, the III-nitride semiconductor light-emitting device of the present invention includes a substrate 10, a buffer layer 11, an N-type III-nitride thin film layer 12, a light-emitting layer 13 composed of III-nitride quantum wells, and a P-type III-nitride thin film Layer 14, transparent electrode layer 15, N-type metal electrode layer 16, welding electrode 17, and light-transmitting protective film 18. The difference from traditional III-nitride semiconductor light-emitting devices is that the surface of the substrate 10 forms a stepped side wall B , the area of ​​the inclined surface H of the stepped side wall B is maximized, the scattering efficiency of the substrate 10 is improved, and thus the external quantum efficiency is also increased.

[0033] The p-type III-nitride thin film layer 14 and the transparent electrode layer 15 are interposed by an n+ type or p+ type III-nitride semiconductor layer, or an n-type or p-type III-nitride semicon...

Embodiment 2

[0046] Figures 10a-10c It is a schematic diagram of another example of the present invention. In this example, the dry etching mask. is realized twice, and the ladder pattern B is obtained by one dry etching.

[0047] Using photolithographic plates such as Figure 10a As shown in the figure, a large-scale photolithography pattern mask 61 is formed, and then above it as Figure 10b As shown, a small-scale photolithographic pattern mask 62 is formed. The process of forming the small-scale photolithographic pattern mask 62 on the large-scale photolithographic pattern mask 61 is the same as the process of forming the large-scale photolithographic pattern mask 61 except for the size of the photoresist plate used.

Embodiment 3

[0049] Figure 11 It is a schematic diagram of another example of the present invention. and Figure 10a , 10b is different in that the same photolithography plate is used to form the first photolithography pattern mask 63 and the second photolithography pattern mask 64, and they are interlaced with each other. At this time, in the process of partially superimposing the first photolithography pattern mask 63 pattern and the second photolithography pattern mask 64 pattern, except that the position of the photoresist plate is adjusted to the position where the pattern is superimposed during exposure, other processes are the same as those in the photolithography pattern mask.

[0050] The process of forming the first photolithography pattern mask 63 on the substrate (10) is the same.

[0051] Embodiment 2 and Embodiment 3 are different from Embodiment 1 in that a dry etching process is performed to form pattern B. The specific etching method is further described as follows:

...

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Abstract

The invention belongs to the semiconductor material technology field and particularly relates to an III-nitride semiconductor light emitting device graphical substrate and a preparation method for the same. As many projected graphs as possible are etched on the surface of a substrate, and the graph can be a polygon; the side walls of the polygon form stepped appearances; the stepped side wall has as many side wall surfaces as possible; the preparation method for the III-nitride semiconductor light emitting device graphical substrate comprises that the projected graph on the surface of the substrate are manufactured through multiple times of optical etching and the etching technology, and particularly comprises: a first stage that a first optical etching graph is formed on the substrate; a second stage that a second optical etching graph which is partially superposed with the first optical etching pattern is formed on the substrate on which the first optical etching graph is formed; and a third stage that substrates where the first optical etching graph and the second optical etching graph are formed are etched to model. The stepped side walls of the III-nitride semiconductor light emitting device graphical substrate are formed in order to improve side wall density of the substrate, and maximally guarantees an inclination degree; the multiple times of optical etching and the etching technology improve light refraction and scattering of the graph surface in order to improve external quantum efficiency.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a patterned substrate of a III-nitride semiconductor light-emitting device and a manufacturing method thereof. Background technique [0002] In order to solve III-nitride semiconductor light-emitting devices (referred to as Al x Ga y ln 1-x-y N, wherein 0≤x≤1, 0≤y≤1, x+y≤1) the problem of low light extraction efficiency of the patterned substrate, the existing III-nitride semiconductor light-emitting device substrate manufacturing method adopts such as figure 1 As shown, the surface of the substrate 10 is first etched to form hexagonal columns, cylinders or other convex patterns A protruding from the surface; then the buffer layer 11, N-type III-nitride thin film layer 12, N-type III-nitride thin film layer 12, The light-emitting layer 13 and the P-type III-nitride thin film layer 14 composed of III-nitride quantum wells; then a transparent electrode layer 15 i...

Claims

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Application Information

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IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/22H01L33/007
Inventor 金昌台李庆跃刘建哲吴宗泽徐良李凯
Owner 东晶电子金华有限公司
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