Semiconductor detector

Abstract

The invention brings forward a semiconductor detector. The semiconductor detector comprises a detector crystal which comprises a crystal main body, an anode and a cathode; field enhancement electrodes used for applying voltages to the detector crystal; and insulation materials arranged between the field enhancement electrodes and the surface of the detector crystal. The semiconductor detector further comprises a field enhancement electrode circuit board, the field enhancement electrode circuit board is provided with a bottom connection layer in contact with the surface of the detector crystal and a top surface opposite to the bottom connection layer, the top layer is connected with high-voltage input of the semiconductor detector, and the insulation materials exist between the bottom connection layer and the detector surface of the detector crystal.

Description

technical field [0001] The invention relates to a semiconductor detector, in particular to a semiconductor detector, and more specifically to a field-enhanced line electrode CdZnTe semiconductor detector. Background technique [0002] Due to its relatively uniform electric field distribution, the field-enhanced semiconductor detector greatly improves the energy resolution and peak-to-valley ratio of the detector. However, in practical applications, the high voltage of the field-enhancing electrode is directly connected to the side of the detector, usually by direct welding of high-voltage wires. The source also carries noise, which increases the noise of the detector. At the same time, a dark current will also be generated between the field-enhancing electrodes to affect the performance of the detector. At the same time, in the process of charge drift, the field-enhancing electrodes will also absorb part of the signal, making the anode collection efficiency is reduced. Co...

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Problems solved by technology

However, in practical applications, the high voltage of the field-enhancing electrode is directly connected to the side of the detector, usually by direct welding of high-voltage wires. The source also carries noise, which increases the noise of the detector. At the same time, a dark current will also be generated between the field-enhancing electrodes to affect the performance of the detector. At the same time, in the process of charge drift, the field-enhancing electrodes will also absorb part of the signal, making the anode The collection efficiency has decreased

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