Grinding pad for gallium oxide single crystals and preparation method of grinding pad

A technology of grinding pads and gallium oxide, which is applied in the direction of grinding tools, grinding/polishing equipment, grinding devices, etc., can solve the problems of complicated manufacturing process, high cost of raw materials, increased workload of workers, etc., so as to improve the use efficiency, Avoid the effects of cleavage pits and free shedding

Active Publication Date: 2017-01-04
盐城卓越电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the fine grinding of gallium oxide can be carried out by means of free abrasives, that is, the combination of abrasive paste and silk abrasive pads is used to precisely process gallium oxide, but this solution requires that the abrasive paste be regularly applied to silk during the processing of gallium oxide. Above, this will significantly increase the workload of workers, in addition, abrasive paste and abrasive pads also need to be classified
The process scheme of precision machining crystal materials using fixed abrasive

Method used

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  • Grinding pad for gallium oxide single crystals and preparation method of grinding pad
  • Grinding pad for gallium oxide single crystals and preparation method of grinding pad
  • Grinding pad for gallium oxide single crystals and preparation method of grinding pad

Examples

Experimental program
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Effect test

Embodiment 1

[0032] A polishing pad for gallium oxide single crystal, comprising elastic crepe and a mixed abrasive grain rubber layer from bottom to top, and the mixed abrasive grain rubber layer is mixed with resin glue, diamond micropowder of W3 and water-soluble grinding aid made.

[0033] The preparation method of the polishing pad for the above-mentioned gallium oxide single crystal comprises the following steps:

[0034] Step 1, choose elastic crepe satin as the base of the abrasive pad;

[0035] Step 2, according to the mass fraction, weigh water-soluble resin INTAN TP 340 30%, abrasive 10%, PEG-1000 5%, alkanolamide 1.5%, carbomer 2%, and the balance is deionized water;

[0036] Step 3, weighing the above-mentioned material components according to an appropriate ratio, adding resin glue, grinding aids, abrasives, and deionized water in sequence, and stirring evenly to obtain the first mixture;

[0037] Step 4, the first mixture is evenly sprayed on the surface of the cloth base ...

Embodiment 2

[0041] A polishing pad for gallium oxide single crystals, which comprises, from bottom to top, a silk elastic bismuth, a mixed abrasive grain rubber layer, and the mixed abrasive grain rubber layer is mixed with resin glue, diamond micropowder of W1 and water-soluble grinding aids made.

[0042] The preparation method of the polishing pad for the above-mentioned gallium oxide single crystal comprises the following steps:

[0043] Step 1, choose silk elastic double joe as the cloth base of the abrasive pad;

[0044] Step 2, according to the mass fraction, weigh water-soluble resin glue INTAN TP 340 25% and PUR WX 1418 10%, abrasive 5%, PEG-800 5%, alkanolamide 1%, carbomer 1%, the balance is deionized water;

[0045] Step 3, weighing the above-mentioned material components according to an appropriate ratio, adding resin glue, grinding aids, abrasives, and deionized water in sequence, and stirring evenly to obtain the first mixture;

[0046] Step 4, uniformly spraying the fir...

Embodiment 3

[0050] A polishing pad for gallium oxide single crystal, which comprises silk elastic spinning from bottom to top, a mixed abrasive grain rubber layer, and the mixed abrasive grain rubber layer is composed of resin glue, diamond micropowder of W1.5 and water-soluble grinding aid mixed.

[0051]The preparation method of the polishing pad for the above-mentioned gallium oxide single crystal comprises the following steps:

[0052] Step 1, choose silk stretch spinning as the cloth base of the abrasive pad;

[0053] Step 2, according to the mass fraction, weigh water-soluble resin glue INTAN TP 340 30%, PUR WX 1418 10%, RPU069 5%, abrasive 10%, PEG-600 5%, fatty amide sulfosuccinic acid monoester 1 %, Carbomer 1%, the balance is deionized water;

[0054] Step 3, weighing the above-mentioned material components according to an appropriate ratio, adding resin glue, grinding aids, abrasives, and deionized water in sequence, and stirring evenly to obtain the first mixture;

[0055] ...

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Abstract

The invention discloses a grinding pad for gallium oxide single crystals and a preparation method of the grinding pad. The grinding pad comprises a grinding pad cloth base and a mixed abrasive particle adhesive layer from bottom to top sequentially, wherein the mixed abrasive particle adhesive layer is formed by a resin adhesive, a grinding material and water-soluble grinding auxiliaries through mixing. The preparation method comprises steps as follows: the grinding pad cloth base is selected; 25%-40% by mass of the resin adhesive, 5%-10% by mass of the grinding material, 30%-40% by mass of the water-soluble grinding auxiliaries and the balance of deionized water are weighed; the materials are weighed in a proper proportion, the resin adhesive, the grinding pad auxiliaries, the grinding material and the deionized water are added sequentially and stirred uniformly, and a first mixture is obtained; the first mixture is uniformly sprayed to the surface of the grinding pad cloth base, and a semi-finished product of the grinding pad is obtained; the semi-finished product of the grinding pad is dried, and a finished product of the grinding pad is obtained. According to the grinding pad, alternate use of the grinding material can be realized, the grinding efficiency is improved, and larger scratches cannot be caused.

Description

technical field [0001] The invention relates to the field of oxidant single crystal grinding supplies, in particular to a grinding pad for gallium oxide single crystal and a preparation method thereof. Background technique [0002] Application of gallium oxide single crystal (β-Ga 2 o 3 ) to prepare white LEDs for the substrate. It was first exhibited in early 2013. Gallium oxide is a new type of wide-bandgap semiconductor material with stable physical and chemical properties, which is very suitable for the application of the semiconductor lighting industry. However, gallium oxide has a strong cleavage property, and cleavage fractures are prone to occur on the crystal surface during mechanical processing. The cleavage phenomenon mainly occurs in the ultra-precision grinding stage, which eventually leads to the failure of the target product. Since gallium oxide is a new type of crystal material, there are few introductions on the processing technology of this material in ...

Claims

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Application Information

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IPC IPC(8): B24B37/22B24B37/24B24D18/00
CPCB24B37/22B24B37/245B24D18/009
Inventor 黄传锦周海顾斌徐晓明龚凯
Owner 盐城卓越电子材料有限公司
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