Preparation method of polydimethylsiloxane porous film

A technology of polydimethylsiloxane and dimethylsiloxane, which is applied in the field of preparation of polydimethylsiloxane porous films, can solve the problem of long metal mold process, long preparation process time, and short service life and other issues, to achieve the effect of low cost, improved application range, and easy operation

Inactive Publication Date: 2017-01-04
苏州锐材半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the process has a long processing cycle and high cost
[0005] Therefore, in order to solve the above technical problems, it is necessary to improve the existing design and design a preparation method of polydimethylsiloxane porous film, which can overcome the brittleness, short service life and The shortcomings of long preparation process time, etc., can overcome the defects of long process and high cost in the metal mold prepared by UV-LIGA process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0017] Specific embodiment one, a kind of preparation method of polydimethylsiloxane porous film, its steps are:

[0018] (1) The preparation of the porous film template, first spin-coat photoresist on the silicon wafer according to the shape of the porous film to form a photoresist film, and then perform photolithography through a mask plate with a porous structure And the subsequent development process, cleaning with isopropanol after development, drying with nitrogen, and finally using etching technology to etch on the silicon wafer according to the thickness of the porous film according to the photolithographic traces, and prepare a porous film template with micro-nano patterns for future use ;

[0019] (2) Preparation of polydimethylsiloxane filler, adding curing agent and silicone oil to polydimethylsiloxane, stirring evenly and then ready for use, wherein the weight of dimethylsiloxane, curing agent and diluent The ratio is 1:1:1;

[0020] (3) Preparation of polydimet...

specific Embodiment 2

[0022] Specific embodiment two, a kind of preparation method of polydimethylsiloxane porous film, its steps are:

[0023] (1) The preparation of the porous film template, first spin-coat photoresist on the silicon wafer according to the shape of the porous film to form a photoresist film, and then perform photolithography through a mask plate with a porous structure And the subsequent development process, cleaning with isopropanol after development, drying with nitrogen, and finally using etching technology to etch on the silicon wafer according to the thickness of the porous film according to the photolithographic traces, and prepare a porous film template with micro-nano patterns for future use ;

[0024] (2) Preparation of polydimethylsiloxane filler, add curing agent and silicone oil DC244 to polydimethylsiloxane, stir evenly, and prepare for later use. Among them, the content of dimethylsiloxane, curing agent and diluent The weight ratio is 13:1:1;

[0025] (3) Preparat...

specific Embodiment 3

[0027] Specific embodiment three, a kind of preparation method of polydimethylsiloxane porous film is characterized in that its steps are:

[0028] (1) The preparation of the porous film template, first spin-coat photoresist on the silicon wafer according to the shape of the porous film to form a photoresist film, and then perform photolithography through a mask plate with a porous structure And the subsequent development process, cleaning with isopropanol after development, drying with nitrogen, and finally using etching technology to etch on the silicon wafer according to the thickness of the porous film according to the photolithographic traces, and prepare a porous film template with micro-nano patterns for future use ;

[0029] (2) Preparation of polydimethylsiloxane filler, adding curing agent and silicone oil to polydimethylsiloxane, stirring evenly and then ready for use, wherein the weight of dimethylsiloxane, curing agent and diluent The ratio is 25:1:1;

[0030] (...

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Abstract

The invention relates to the technical field of microfluidic chips, in particular to a preparation method of a polydimethylsiloxane porous film. The preparation method of the polydimethylsiloxane porous film can overcome the weaknesses that a silicon mold is relatively crisp, short in service life, relatively long in preparation process time and the like, and also can overcome the defects of a metal mold prepared by a UV-LIGA process that the process is long, and the cost is high. A process for preparing the polydimethylsiloxane porous film is simple, the cost is low, the operation is easy, the prepared polydimethylsiloxane porous film is high in elasticity, gas permeability and hydrophobicity and particularly suitable for researching the microfluidic chips; and moreover, and the polydimethylsiloxane porous film prepared by the method has a porous structure of a micro-nano size, so that the application range of the plydimethylsiloxane prous film can be greatly increased.

Description

technical field [0001] The invention relates to the technical field of microfluidic chips, in particular to a method for preparing a polydimethylsiloxane porous film. Background technique [0002] Polydimethylsiloxane (polydimethylsiloxane, PDMS) is a kind of polymer organosilicon compound. Due to the material's excellent optical permeability, gas permeability, elasticity, and biocompatibility, it has become the most widely used silicon-based organic polymer material in the fields of industry, medicine, and chemistry, for example, it can be used in biomicroelectromechanical microfluidic systems, lubricants, and more. In recent years, PDMS materials have been widely used in the field of microfluidic chips. [0003] In recent years, with the advancement of microfabrication technology and the development of biochemical analysis and other fields, the research of microfluidic chips has received extensive attention. Conventional technology mainly uses silicon, glass, etc. as th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L83/04C08J5/18C08J9/00
Inventor 王云翔
Owner 苏州锐材半导体有限公司
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