Preparation of hydrotalcite nanosheet/carbon array/metal/silicon combined electrode and application of hydrotalcite nanosheet/carbon array/metal/silicon combined electrode as non-enzymatic sensor
A nanosheet and hydrotalcite technology, which is applied in the field of electrochemical biosensor preparation, can solve the problems of unsuitability for large-scale popularization and application, increased operation difficulty, and many uncertain factors, and achieves good preparation reproducibility and detection stability. , the effect of improving electrical conductivity and improving catalytic activity
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[0033] Example 1:
[0034] (1) Place the silicon wafer in acetone, ethanol, and secondary water for 20 minutes. After rinsing with acetone, use N 2 Blow dry; take the treated silicon wafer as the base, use metal sputtering technology, deposit metal platinum under the current condition of 5mA for 120s, obtain a uniform and flat platinum layer on the surface of the silicon wafer, and obtain a platinum / silicon base material;
[0035] (2) In the ultra-clean room, using platinum / silicon wafer as the base material, spin-coating SU-8 2050 photoresist with a thickness of 70 μm, self-leveling for 30 minutes at 23°C and 50% relative humidity Put it on a drying table for pre-baking, first drying at 65°C for 20 minutes, then drying at 95°C for 30 minutes, and finally cooling at a temperature of 23°C and a relative humidity of 50% for 40 minutes to obtain a photoresist film ; Use a mask with neatly arranged light-transmitting areas for exposure, wherein the pattern of the light-transmitti...
Example Embodiment
[0044] Example 2:
[0045] (1) The silicon wafer was sonicated in acetone, ethanol, and secondary water for 20 minutes in turn, rinsed with acetone, and then rinsed with N 2 Blow dry; take the treated silicon wafer as the base, use metal sputtering technology, deposit metal gold under the current condition of 5mA for 180s, obtain a uniform and flat gold layer on the surface of the silicon wafer, and obtain the gold / silicon base material;
[0046] (2) In a clean room, using gold / silicon wafer as the base material, spin-coating SU-8 2050 photoresist with a thickness of 90 μm, self-leveling for 30 minutes at 23°C and 50% relative humidity Place it on a drying table for pre-baking, first drying at 65°C for 20 minutes, then drying at 95°C for 30 minutes, and finally cooling for 30 minutes at a temperature of 23°C and a relative humidity of 50% to obtain a photoresist film ;Use a mask with neatly arranged light-transmitting areas for exposure, wherein the pattern of the light-trans...
Example Embodiment
[0054] Example 3:
[0055] (1) The silicon wafer was sonicated in acetone, ethanol, and secondary water for 20 minutes in turn, rinsed with acetone, and then rinsed with N 2 Blow dry; take the treated silicon wafer as the base, use metal sputtering technology, deposit metal platinum under the current condition of 5mA for 180s, obtain a uniform and flat platinum layer on the surface of the silicon wafer, and obtain a platinum / silicon base material;
[0056] (2) In the ultra-clean room, using platinum / silicon wafer as the base material, spin-coating SU-8 2050 photoresist with a thickness of 80 μm, and self-leveling for 30 minutes at 23°C and 50% relative humidity Place it on a drying table for pre-baking, first drying at 65°C for 20 minutes, then drying at 95°C for 30 minutes, and finally cooling for 30 minutes at a temperature of 23°C and a relative humidity of 50% to obtain a photoresist film ; Expose using a mask with neatly arranged light-transmitting areas, where the patte...
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