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Semiconductor and preparation method thereof, and electronic device
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Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology for electronic devices and semiconductors, used in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems affecting device mobility, etc.
Active Publication Date: 2017-01-04
SMIC INT NEW TECH DEV SHANGHAI CO LTD
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Problems solved by technology
[0005] With the continuous shrinking of the size of semiconductor devices, the punch-through at the bottom of the fin in the FinFET device has become the main problem of the FinFET device, which can currently be solved by high-dose punch-through stop ion implantation, but the high-dose After punch-stop ion implantation, the mobility of the device will be affected due to random doping fluctuations and increased impurity scattering
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Embodiment 1
[0034] Combine below Figures 1a-1f as well as figure 2 The semiconductor device and the preparation method of the present invention are further described.
[0035] Step 101 is executed to provide a semiconductor substrate 101 .
[0036] Specifically, such as Figure 1a As shown, in this step, the semiconductor substrate can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator ( S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.
[0037] Next, a pad oxide layer (Pad oxide) is formed on the semiconductor substrate, wherein the formation method of the pad oxide layer (Pad oxide) can be formed by a deposition method, such as chemical vapor deposition, atomic layer deposition and other methods, It can also be formed by thermally oxidizing the surface of the semiconductor substrate, which will not be repeated here.
[0038] Further, this step ma...
Embodiment 2
[0065] The present invention also provides a semiconductor device, which is prepared by the method described in Embodiment 1. A spacer of amorphous silicon is formed at the bottom of the fin of the semiconductor device, and the amorphous silicon at the bottom of the stepped fin can be used as a barrier layer when the pad oxide layer and the isolation material layer are filled, The size of the bottom of the fin is increased, thereby reducing the possibility of punching through the bottom of the fin, and at the same time obtaining a better short channel effect, further improving the mobility and reliability of the device.
Embodiment 3
[0067] The present invention also provides an electronic device, including the semiconductor device described in Embodiment 2. Wherein, the semiconductor device is the semiconductor device described in Embodiment 2, or the semiconductor device obtained according to the preparation method described in Embodiment 1.
[0068] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the semiconductor device. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.
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Abstract
The invention relates to a semiconductor device and a preparation method thereof and an electronic device. The method comprises the following steps that S1) a semiconductor substrate is provided, and fins are formed on the semiconductor substrate; S2) clearance walls of amorphous form silicon are formed in the bottom sidewalls of the fins to cover the bottoms of the fins and further form a step-shaped fins; S3) pad oxidelayers are formed at the surfaces of the step-shaped fins to cover the surfaces of the step-shaped fins; S4) an isolation material layer is deposited and flattened to fill gaps among the step-shaped fins and cover the step-shaped fins; and S5) the isolation material layer is back-etched so that part of the step-shaped fins is exposed to a target height. The bottoms of the step-shaped fins can increase the size of the bottom of the fins, the possibility of penetrating the bottoms of the fins is reduced, a better short-channel effect is obtained, and the mobility and reliability of the device are improved further.
Description
technical field [0001] The present invention relates to the field of semiconductors, in particular, the present invention relates to a semiconductor device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, the improvement of integrated circuit performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. At present, due to the demand for high device density, high performance, and low cost, the semiconductor industry has advanced to the nanotechnology process node, and the fabrication of semiconductor devices is limited by various physical limits. [0003] As the dimensions of CMOS devices continue to shrink, manufacturing and design challenges have prompted the development of three-dimensional designs such as Fin Field Effect Transistors (FinFETs). Compared with the existing planar transistors, FinFET is an advanced semic...
Claims
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Application Information
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