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T-type grooved gate MOSFET (Metal Oxide Semiconductor Field-effect Transistor)

A trench gate and deep trench technology, which is applied in the field of power semiconductors, can solve problems such as the influence of device threshold and on-resistance, and achieve the effects of preventing failure, increasing gate-source capacitance, and reducing gate-drain capacitance

Inactive Publication Date: 2017-01-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods have an impact on the threshold and on-resistance of the device

Method used

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  • T-type grooved gate MOSFET (Metal Oxide Semiconductor Field-effect Transistor)
  • T-type grooved gate MOSFET (Metal Oxide Semiconductor Field-effect Transistor)
  • T-type grooved gate MOSFET (Metal Oxide Semiconductor Field-effect Transistor)

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Embodiment Construction

[0024] The present invention is described in detail below in conjunction with accompanying drawing

[0025] like figure 1 As shown, a T-groove gate MOSFET of the present invention includes a drain electrode 1, an N-type heavily doped single crystal silicon substrate 2, an N-epitaxial layer 3, and a source electrode 10 that are sequentially stacked from bottom to top; The middle part of the upper layer of the N-epitaxial layer 3 has a Pbody region 7, and the two sides of the N-epitaxial layer 3 have deep groove metal 6; the upper surface of the deep groove metal 6 is in contact with the source electrode 10; the Pbody region 7 is in contact with the deep The upper layer of the N- epitaxial layer 3 between the groove metal 6 has an N+ doped region 13, the upper surface of the N+ doped region 13 is in contact with the source electrode 10, and the side surfaces of the N+ doped region 13 are respectively connected to the Pbody region 7 and the deep Groove metal 6 contacts; There is...

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Abstract

The invention belongs to the technical field of a power semiconductor, in particular to a T-type grooved gate MOSFET (Metal Oxide Semiconductor Field-effect Transistor). A T-type grid structure is introduced, so that the input capacitance of a device is increased; a thick oxide layer is arranged below a T-type grid, the Cgd of the device is simultaneously reduced, and thus, the Cgs / Cdg ratio is improved; the device has higher capability of resisting the influence of drain voltage oscillation on the grid and is low in EMI (Electro-Magnetic Interference) noise; deep groove metal is connected with a deeply-injected P+ region, a parasitic triode of the device is difficult to open by such deep groove body contact structure, and UIS (Unclamped Inductive Switching) thermal failure easily generated during the switch-off process of the device is prevented; and meanwhile, a transverse electric field is introduced to the deeply-injected P+ region and a buried layer p+ region, so that the reverse voltage resistance of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, in particular to a T-shaped groove gate MOSFET. Background technique [0002] Due to the influence of various parasitic parameters in the drive circuit and the gate capacitance of the power MOS transistor in the high-power drive circuit, the drive signal will oscillate uncertainly, and the gate oscillation will greatly affect the performance and stability of the system. In the device design process, the larger the gate resistance, the smaller the gate oscillation, and the smaller the gate-to-drain capacitance, the smaller the gate oscillation. However, there is a compromise relationship between the EMI characteristics of the power MOS tube and the switching characteristics of the power tube, so it is often necessary to consider various parameters of the device at the same time in the design to obtain the optimal switching characteristics and EMI resistance. Both the currently propos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/06
CPCH01L29/0684H01L29/4236H01L29/78
Inventor 李泽宏陈哲曹晓峰李爽陈文梅林育赐谢驰任敏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA