Schottky diode manufacturing method and Schottky diode
A Schottky diode and anode technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large reverse leakage current, reduce area, reduce reverse leakage current, reduce The effect of a small contact area
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[0036] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0037] figure 1 This is a schematic flow diagram corresponding to a method for manufacturing a Schottky diode provided by an embodiment of the present invention, and the method includes:
[0038] Step 101, sequentially forming a GaN layer, a barrier layer and a passivation layer on the silicon substrate layer;
[0039] Step 102, etching at least the passivation layer to the barrier layer to form an anode contact hole;
[0040] Step 103, depositi...
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